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GaNAs/GaAs中的激子局域化和发光特性
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作者 罗向东 徐仲英 +1 位作者 谭平恒 ge wei-kun 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2005年第3期185-188,共4页
通过多种光谱手段研究了GaNAs量子阱和体材料中的局域态和非局域态的不同光学特性.在超短激光脉冲激发下,第一次在GaNAs/GaAs量子阱发光光谱中,观察到非局域激子发光.选择激发光谱表明,局域中心主要聚集在GaNAs、GaAs异质结界面.在低N... 通过多种光谱手段研究了GaNAs量子阱和体材料中的局域态和非局域态的不同光学特性.在超短激光脉冲激发下,第一次在GaNAs/GaAs量子阱发光光谱中,观察到非局域激子发光.选择激发光谱表明,局域中心主要聚集在GaNAs、GaAs异质结界面.在低N含量的GaNAs体材料发光光谱中,除了与N相关的局域态发光外,也发现发光特性完全不同的GaNAs合金态发光.这些结果为理解ⅢⅤN族半导体的异常能带特性具有十分重要的意义. 展开更多
关键词 GaNAs 激子局域化 光学性质 量子阱 半导体材料
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Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt 被引量:1
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作者 CHEN Zhi-Ming MA Jian-Ping +4 位作者 WANG Jian-Nong LU Gang YU Ming-Bin LEI Tian-Min ge wei-kun 《Chinese Physics Letters》 SCIE CAS CSCD 2000年第10期770-772,共3页
Intense wide-band photoluminescence(PL)with high stability to ultraviolet(UV)light irradiation has been observed in a wide temperature range from a polycrystalline SiC sintered from graphite and melt Si at high temper... Intense wide-band photoluminescence(PL)with high stability to ultraviolet(UV)light irradiation has been observed in a wide temperature range from a polycrystalline SiC sintered from graphite and melt Si at high temperature over 1500°C.X-ray diffraction results showed that the sintered material consists of mainly cubic and 6H-SiC crystallites oriented randomly and a smallamount of graphite with(002)preferential orientation.PLspectra of the samples were measured under excitation of the incident UV light beam from an He-Cd laser(325 nm,l0mW)in the temperature range from 10 to 300 K.The PL spectra were found to be a single wide-band centered around 2.2 eV at room temperature and to be divided into a much more intensive blue band and a lessintensive red band at low temperature.The low temperature PL bands consist of several luminescence peaks that change in intensities relatively with variation of temperature. 展开更多
关键词 EXCITATION ULTRAVIOLET CUBIC
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