Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting d...Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting distinct spatial modes of the same waveguide.This allows,in principle,to place signals in different spectral regions and satisfy the phase matching condition over considerably larger bandwidths compared to intramodal processes.However,the demonstrations reported so far have shown a limited bandwidth and suffered from the lack of on-chip components designed for broadband manipulation of different modes.We demonstrate here a silicon-rich silicon nitride wavelength converter based on Bragg scattering intermodal FWM,which integrates mode conversion,multiplexing and de-multiplexing functionalities on-chip.The system enables wavelength conversion between pump waves and a signal located in different telecommunication bands(separated by 60 nm)with a 3 dB bandwidth exceeding 70 nm,which represents,to our knowledge,the widest bandwidth ever achieved in an intermodal FWM-based system.展开更多
We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insula...We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer.The proposed device consists of two grating levels designed with two different linear apodizations,with opposite chirping signs,and whose period is varied for each scattering unit.A coupling efficiency of-0.8 d B at1550 nm is experimentally demonstrated,which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or indexmatching material between the fiber and the grating.展开更多
基金Engineering and Physical Sciences Research Council(EP/R003076/1,EP/T007303/1,EP/W024772/1)Ministero dell’Universitàe della Ricerca(PRIN(2022H7RR4F))。
文摘Intermodal four-wave mixing(FWM)processes have recently attracted significant interest for all-optical signal processing applications thanks to the possibility to control the propagation properties of waves exciting distinct spatial modes of the same waveguide.This allows,in principle,to place signals in different spectral regions and satisfy the phase matching condition over considerably larger bandwidths compared to intramodal processes.However,the demonstrations reported so far have shown a limited bandwidth and suffered from the lack of on-chip components designed for broadband manipulation of different modes.We demonstrate here a silicon-rich silicon nitride wavelength converter based on Bragg scattering intermodal FWM,which integrates mode conversion,multiplexing and de-multiplexing functionalities on-chip.The system enables wavelength conversion between pump waves and a signal located in different telecommunication bands(separated by 60 nm)with a 3 dB bandwidth exceeding 70 nm,which represents,to our knowledge,the widest bandwidth ever achieved in an intermodal FWM-based system.
基金Engineering and Physical Sciences Research Council (EP/T007303/1)Agencia Estatal de Investigación and NextGenerationEU/PRTR (FJC2020-042823-I)。
文摘We present the design and experimentally demonstrate a dual-level grating coupler with subdecibel efficiency for a 220 nm thick silicon photonics waveguide which was fabricated starting from a 340 nm silicon-on-insulator wafer.The proposed device consists of two grating levels designed with two different linear apodizations,with opposite chirping signs,and whose period is varied for each scattering unit.A coupling efficiency of-0.8 d B at1550 nm is experimentally demonstrated,which represents the highest efficiency ever reported in the telecommunications C-band in a single-layer silicon grating structure without the use of any backreflector or indexmatching material between the fiber and the grating.
