The defects induced by 64 MeV ^(19)F ion irradiation to a Auence of 4.3×10^(16)/cm^(2) are investigated in GaAs by positron annihilation lifetime technique.Di-vacancies are created by the irradiation.The formatio...The defects induced by 64 MeV ^(19)F ion irradiation to a Auence of 4.3×10^(16)/cm^(2) are investigated in GaAs by positron annihilation lifetime technique.Di-vacancies are created by the irradiation.The formation of tri-and quadri-vacancies is observed during thermal annealing.The di-,tri-and quadri-vacancies are annealed away at 350,550 and 800℃,respectively.展开更多
文摘The defects induced by 64 MeV ^(19)F ion irradiation to a Auence of 4.3×10^(16)/cm^(2) are investigated in GaAs by positron annihilation lifetime technique.Di-vacancies are created by the irradiation.The formation of tri-and quadri-vacancies is observed during thermal annealing.The di-,tri-and quadri-vacancies are annealed away at 350,550 and 800℃,respectively.
