We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventiona...We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventional GaAs single-junction solar cells,the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum(>1330 nm),a higher short-circle current(about 53%increase)and a stronger radiation hardness.The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.展开更多
We demonstrate a technique of temperature compensation for 1.3μm InAs/GaAs quantum-dot(QD)lasers by facet coating design.The key point of the technique is to make sure that the mirror loss of the lasers decreases as ...We demonstrate a technique of temperature compensation for 1.3μm InAs/GaAs quantum-dot(QD)lasers by facet coating design.The key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises.To realize this,we design a type of facet coating by shifting the central wavelength of the facet coating from 1310nm to 1480nm,whose reflectivity increases as the emission wavelength of the lasers red-shifts.Consequently,the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10℃to 70℃,compared with the traditional one with a temperature-independent mirror loss.展开更多
基金Supported by the One-Hundred Talents Program of Chinese Academy of Sciences,and the National Science Foundation of China under Grant Nos 60876033,61076050 and 61021003.
文摘We report the fabrication of intermediate-band solar cells(IBSCs)based on quantum dots(QDs),which consists of a standard P-I-N structure with multilayer stacks of InAs/GaAs QDs in the I-layer.Compared with conventional GaAs single-junction solar cells,the IBSCs based on InAs/GaAs QDs show a broader photo-response spectrum(>1330 nm),a higher short-circle current(about 53%increase)and a stronger radiation hardness.The results have important applications for realizing high efficiency solar cells with stronger radiation hardness.
基金Supported by the One-Hundred Talents Program of Chinese Academy of Sciences and the National Natural Science Foundation of China under Grant Nos 60876033,61076050 and 61021003.
文摘We demonstrate a technique of temperature compensation for 1.3μm InAs/GaAs quantum-dot(QD)lasers by facet coating design.The key point of the technique is to make sure that the mirror loss of the lasers decreases as the temperature rises.To realize this,we design a type of facet coating by shifting the central wavelength of the facet coating from 1310nm to 1480nm,whose reflectivity increases as the emission wavelength of the lasers red-shifts.Consequently,the laser with the new facet coating exhibits a characteristic temperature doubled in size and a more stable slope efficiency in the temperature range from 10℃to 70℃,compared with the traditional one with a temperature-independent mirror loss.
