We investigate the dephasing mechanisms induced by the charge noise and microwave heating effect acting on a graphene double quantum dot (DQD) capacitively coupled to a microwave resonator. The charge noise is obtai...We investigate the dephasing mechanisms induced by the charge noise and microwave heating effect acting on a graphene double quantum dot (DQD) capacitively coupled to a microwave resonator. The charge noise is obtained from DC transport current, and its contribution to dephasing is simultaneously determined by the amplitude response of the microwave resonator. A lowfrequency 1/f-type noise is demonstrated to be the dominant factor of the dephasing of graphene DQD. Furthermore, when the applied microwave power is larger than -90 dBm, the dephasing rate of graphene DQD increases rapidly with the increase of microwave power, and fluctuates slightly with the applied microwave power smaller than -90 dBm. Our results can be applied to suppress the impeditive influence on the dephasing of graphene-based devices associated with microwave input in the perspective investigations.展开更多
Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its int...Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature,thus it is compatible with Si integrated circuits(ICs)technology.Herein,the a-Ga_(2)O_(3) film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition(PE-ALD)at a growth temperature of 250°C.The stoichiometric a-Ga_(2)O_(3) thin film with a low defect density is achieved owing to the mild PE-ALD condition.As a result,the fabricated Au/a-Ga_(2)O_(3)/Au photodetector shows a fast time response,high responsivity,and excellent wavelength selectivity for solar-blind photodetection.Furthermore,an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga_(2)O_(3)/Au interface,resulting in the responsivity of 788 A/W(under 254 nm at 10 V),a 250-nm-to-400-nm rejection ratio of 9.2×10^(3),and the rise time and the decay time of 32 ms and 6 ms,respectively.These results demonstrate that the a-Ga_(2)O_(3) film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.展开更多
Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investi- gating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot ...Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investi- gating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the defini- tion of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confim~ ment and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.展开更多
With propagating through a dispersive medium,the temporal–spectral profile of optical pulses should be inevitably modified.Although such dispersion effect has been well studied in classical optics,its effect on a sin...With propagating through a dispersive medium,the temporal–spectral profile of optical pulses should be inevitably modified.Although such dispersion effect has been well studied in classical optics,its effect on a singlephoton wave-packet has not yet been entirely revealed.In this paper,we investigate the effect of dispersion on indistinguishability between single-photon wave-packets through the Hong–Ou–Mandel(HOM)interference.By dispersively manipulating two weak coherent single-photon wave-packets which are prepared by attenuating mode-locked laser pulses before interfering with each other,we observe that the difference of the second-order dispersion between two optical paths of the HOM interferometer can be mapped to the interference curve,indicating that(i)with the same amount of dispersion effect in both paths,the HOM interference curve must be only determined by the intrinsic indistinguishability between the wave-packets,i.e.,dispersion cancellation due to the indistinguishability between Feynman paths;and(ii)unbalanced dispersion effect in two paths cannot be canceled and will broaden the interference curve thus providing a way to measure the second-order dispersion coefficient.Our results suggest a more comprehensive understanding of the single-photon wave-packet and pave ways to explore further applications of the HOM interference.展开更多
Numerous reports have elucidated the importance of mechanical resonators comprising quantum-dot-embedded carbon nanotubes(CNTs)for studying the effects of single-electron transport.However,there is a need to investiga...Numerous reports have elucidated the importance of mechanical resonators comprising quantum-dot-embedded carbon nanotubes(CNTs)for studying the effects of single-electron transport.However,there is a need to investigate the single-electron transport that drives a large amplitude into a nonlinear regime.Herein,a CNT hybrid device has been investigated,which comprises a gate-defined quantum dot that is embedded into a mechanical resonator under strong actuation conditions.The Coulomb peak positions synchronously oscillate with the mechanical vibrations,enabling a single-electron Chopper*1 mode.Conversely,the vibration amplitude of the CNT versus its frequency can be directly visualized via detecting the time-averaged single-electron tunneling current.To understand this phenomenon,a general formula is derived for this time-averaged single-electron tunneling current,which agrees well with the experimental results.By using this visualization method,a variety of nonlinear motions of a CNT mechanical oscillator have been directly recorded,such as Duffing nonlinearity,parametric resonance,and double-,fractional-,mixed-frequency excitations.This approach opens up burgeoning opportunities for investigating and understanding the nonlinear motion of a nanomechanical system and its interactions with electron transport in quantum regimes.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0301700)the National Natural Science Foundation of China(Grant Nos.61674132,11674300,11575172,and 11625419)the Anhui Initiative in Quantum information Technologies,China(Grant No.AHY080000)
文摘We investigate the dephasing mechanisms induced by the charge noise and microwave heating effect acting on a graphene double quantum dot (DQD) capacitively coupled to a microwave resonator. The charge noise is obtained from DC transport current, and its contribution to dephasing is simultaneously determined by the amplitude response of the microwave resonator. A lowfrequency 1/f-type noise is demonstrated to be the dominant factor of the dephasing of graphene DQD. Furthermore, when the applied microwave power is larger than -90 dBm, the dephasing rate of graphene DQD increases rapidly with the increase of microwave power, and fluctuates slightly with the applied microwave power smaller than -90 dBm. Our results can be applied to suppress the impeditive influence on the dephasing of graphene-based devices associated with microwave input in the perspective investigations.
基金This work was supported by the National Natural Science Foundation of China under Grant No.21872019 and the Innovation Group Project of Sichuan Province under Grant No.20CXTD0090This work was also partly supported by the Slovenian Research Agency under Grants No.P2-0412 and No.J2-2498 for A.Mavric and M.Valant,and No.Z1-3189 for N.Pastukhova。
文摘Wide-bandgap gallium oxide(Ga_(2)O_(3))is one of the most promising semiconductor materials for solar-blind(200 nm to 280 nm)photodetection.In its amorphous form,amorphous gallium oxide(a-Ga_(2)O_(3))maintains its intrinsic optoelectronic properties while can be prepared at a low growth temperature,thus it is compatible with Si integrated circuits(ICs)technology.Herein,the a-Ga_(2)O_(3) film is directly deposited on pre-fabricated Au interdigital electrodes by plasma enhanced atomic layer deposition(PE-ALD)at a growth temperature of 250°C.The stoichiometric a-Ga_(2)O_(3) thin film with a low defect density is achieved owing to the mild PE-ALD condition.As a result,the fabricated Au/a-Ga_(2)O_(3)/Au photodetector shows a fast time response,high responsivity,and excellent wavelength selectivity for solar-blind photodetection.Furthermore,an ultra-thin MgO layer is deposited by PE-ALD to passivate the Au/a-Ga_(2)O_(3)/Au interface,resulting in the responsivity of 788 A/W(under 254 nm at 10 V),a 250-nm-to-400-nm rejection ratio of 9.2×10^(3),and the rise time and the decay time of 32 ms and 6 ms,respectively.These results demonstrate that the a-Ga_(2)O_(3) film grown by PE-ALD is a promising candidate for high-performance solar-blind photodetection and potentially can be integrated with Si ICs for commercial production.
基金This work was supported by the Na- tional Key R&D Program (Grant No. 2016YFA0301700), the Strategic Priority Research Program of the CAS (Grant No. XDB01030000), the National Natural Science Foundation of China (Grant Nos. 11304301, 11575172, 613061507 and 91421303), and the Fundamental Research Fund for the Central Universities (No. WK2470000017).
文摘Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investi- gating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the defini- tion of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confim~ ment and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on electron transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.
基金National Key Research and Development Program of China(2017YFA0304000,2017YFB0405100,2018YFA0306102,2018YFA0307400)National Natural Science Foundation of China(61308041,61405030,61704164,61705033,61775025,62005039,91836102,U19A2076)China Postdoctoral Science Foundation(2020M673178).
文摘With propagating through a dispersive medium,the temporal–spectral profile of optical pulses should be inevitably modified.Although such dispersion effect has been well studied in classical optics,its effect on a singlephoton wave-packet has not yet been entirely revealed.In this paper,we investigate the effect of dispersion on indistinguishability between single-photon wave-packets through the Hong–Ou–Mandel(HOM)interference.By dispersively manipulating two weak coherent single-photon wave-packets which are prepared by attenuating mode-locked laser pulses before interfering with each other,we observe that the difference of the second-order dispersion between two optical paths of the HOM interferometer can be mapped to the interference curve,indicating that(i)with the same amount of dispersion effect in both paths,the HOM interference curve must be only determined by the intrinsic indistinguishability between the wave-packets,i.e.,dispersion cancellation due to the indistinguishability between Feynman paths;and(ii)unbalanced dispersion effect in two paths cannot be canceled and will broaden the interference curve thus providing a way to measure the second-order dispersion coefficient.Our results suggest a more comprehensive understanding of the single-photon wave-packet and pave ways to explore further applications of the HOM interference.
基金the National Key Research and Development Program of China(Nos.2018YFA0208400,2018YFA0306102)the National Natural Science Foundation of China(Nos.11904014,51727805,91836102,61704164)+2 种基金the China Postdoctoral Science Foundation(Nos.2018M641152 and BX20180022)the Beijing Advanced Innovation Center for Future Chips(ICFC)the Beijing Advanced Innovation Centre for Big Data and Brain Computing(BDBC).
文摘Numerous reports have elucidated the importance of mechanical resonators comprising quantum-dot-embedded carbon nanotubes(CNTs)for studying the effects of single-electron transport.However,there is a need to investigate the single-electron transport that drives a large amplitude into a nonlinear regime.Herein,a CNT hybrid device has been investigated,which comprises a gate-defined quantum dot that is embedded into a mechanical resonator under strong actuation conditions.The Coulomb peak positions synchronously oscillate with the mechanical vibrations,enabling a single-electron Chopper*1 mode.Conversely,the vibration amplitude of the CNT versus its frequency can be directly visualized via detecting the time-averaged single-electron tunneling current.To understand this phenomenon,a general formula is derived for this time-averaged single-electron tunneling current,which agrees well with the experimental results.By using this visualization method,a variety of nonlinear motions of a CNT mechanical oscillator have been directly recorded,such as Duffing nonlinearity,parametric resonance,and double-,fractional-,mixed-frequency excitations.This approach opens up burgeoning opportunities for investigating and understanding the nonlinear motion of a nanomechanical system and its interactions with electron transport in quantum regimes.