Design of a new type of photoconductive semiconductor switches （PCSSs） is presented, and the withstand voltage is improved. The ttashover voltage of the back-triggered PCSS is found to be higher than that of the fro...Design of a new type of photoconductive semiconductor switches （PCSSs） is presented, and the withstand voltage is improved. The ttashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the back-triggered PCSS and the front-triggered PCSS, a detailed statistics analysis and theoretical explanation are expounded. The experiments also prove that the PCSS we developed could resist a voltage as high as 20 k V under the repetition frequency of 30 Hz.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 50837005 and 10876026, the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment under Grant No EIPE09203.
文摘Design of a new type of photoconductive semiconductor switches （PCSSs） is presented, and the withstand voltage is improved. The ttashover voltage of the back-triggered PCSS is found to be higher than that of the front-triggered one. By analyzing the differences of the flashover voltage between the back-triggered PCSS and the front-triggered PCSS, a detailed statistics analysis and theoretical explanation are expounded. The experiments also prove that the PCSS we developed could resist a voltage as high as 20 k V under the repetition frequency of 30 Hz.
