Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is yes.Herein,we experimentally verify that the photodetection performance mod...Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is yes.Herein,we experimentally verify that the photodetection performance modulation effect of oxygen vacancy(Vo)is transmitted from theε-Ga_(2)O_(3)layer to the PEDOT:PSS/ε-Ga_(2)O_(3)(PGO)hybrid heterojunction.By adopting the annealedε-Ga_(2)O_(3)films,whose Voconcentrations are remolded by annealing ambients,the constructed PGO photodetectors(PDs)demonstrate regulable self-powered performance.As the V_(o)defects decrease,the photodetection properties are effectively enhanced with a high photo-to-dark current ratio of 2.37×10^(7),an excellent on/off switching ratio of 6.45×10^(5),fast rise/decay time of 121/72 ms,a large responsivity of 67.9 m A/W,superior detectivity of 9.2×10^(13)Jones,an outstanding external quantum efficiency of 33.2%,and a high rejection ratio(R_(250)/R_(400))of 5.96×10^(6)at 0 V in PGO-O;PD.The better photoresponse is attributed to the less V_(o)defect concentration in theε-Ga_(2)O_(3)layer,which could favor the lower electron-trapping probability and a more efficient charge-carrier transfer.Considering the universality of V_(o)defects in oxide materials,the proposed regulation strategy of photoresponse will open the route of high self-powered performance for next-generation ultraviolet PDs.展开更多
The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, pla...The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, planar Schottky junctions have simple structures and technological demands and are easy integrated. Herein, in this work, we prepared the β-Ga_(2)O_(3) thin film by metalorganic chemical vapor deposition method to construct planar Ti/β-Ga2O3/Ni Schottky photodiode detectors with different onstate resistances. Fortunately, all the devices exhibit state-of-the-art performances, such as responsivity of 175–1372 A W^(-1),specific detectivity of 10^(14) Jones and external quantum efficiency of 85700%–671500%. In addition, the dependences of device performances on the on-state resistances indicate that the higher dark currents, photocurrents and photoresponsivities may well be obtained when on-state resistance is smaller, due to the less external power is used to overcome the impendence and condensance at the Ti/β-Ga_(2)O_(3) and Ni/β-Ga_(2)O_(3) interfaces, but contributing to higher electric current flow both in the dark and under illuminations.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61774019,61704153)。
文摘Can the modulation effect of charge-carrier transfer be inherited from a single layer to its heterojunction structure?Certainly,the answer is yes.Herein,we experimentally verify that the photodetection performance modulation effect of oxygen vacancy(Vo)is transmitted from theε-Ga_(2)O_(3)layer to the PEDOT:PSS/ε-Ga_(2)O_(3)(PGO)hybrid heterojunction.By adopting the annealedε-Ga_(2)O_(3)films,whose Voconcentrations are remolded by annealing ambients,the constructed PGO photodetectors(PDs)demonstrate regulable self-powered performance.As the V_(o)defects decrease,the photodetection properties are effectively enhanced with a high photo-to-dark current ratio of 2.37×10^(7),an excellent on/off switching ratio of 6.45×10^(5),fast rise/decay time of 121/72 ms,a large responsivity of 67.9 m A/W,superior detectivity of 9.2×10^(13)Jones,an outstanding external quantum efficiency of 33.2%,and a high rejection ratio(R_(250)/R_(400))of 5.96×10^(6)at 0 V in PGO-O;PD.The better photoresponse is attributed to the less V_(o)defect concentration in theε-Ga_(2)O_(3)layer,which could favor the lower electron-trapping probability and a more efficient charge-carrier transfer.Considering the universality of V_(o)defects in oxide materials,the proposed regulation strategy of photoresponse will open the route of high self-powered performance for next-generation ultraviolet PDs.
基金supported by the National Natural Science Foundation of China (Grant Nos. 61774019,51572033 and 51572241)the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)+1 种基金the Fundamental Research Funds for the Central UniversitiesBUPT Excellent Ph D Students Foundation (Grant No. CX2020314)。
文摘The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, planar Schottky junctions have simple structures and technological demands and are easy integrated. Herein, in this work, we prepared the β-Ga_(2)O_(3) thin film by metalorganic chemical vapor deposition method to construct planar Ti/β-Ga2O3/Ni Schottky photodiode detectors with different onstate resistances. Fortunately, all the devices exhibit state-of-the-art performances, such as responsivity of 175–1372 A W^(-1),specific detectivity of 10^(14) Jones and external quantum efficiency of 85700%–671500%. In addition, the dependences of device performances on the on-state resistances indicate that the higher dark currents, photocurrents and photoresponsivities may well be obtained when on-state resistance is smaller, due to the less external power is used to overcome the impendence and condensance at the Ti/β-Ga_(2)O_(3) and Ni/β-Ga_(2)O_(3) interfaces, but contributing to higher electric current flow both in the dark and under illuminations.
