Photocatalytic and Luminescent Properties of SrMoO_4 Phosphors Prepared via Hydrothermal Method with Different Stirring Speeds

To probe the potential utilities in the photocatalyst and luminescent materials, a series of SrMoO4 samples have been prepared via the hydrothermal preparation with different stirring speeds. These SrMoO4 samples were characterized using X-ray diffraction analysis, scanning electron microscopy, UV-diffuse reflection spectroscopy （UV-vis）. It has been found that the lattice parameters and [MOO4] tetrahedmn distortion of SrMoO4 samples are increased with the increased stirring speed in the process of bydrothermal preparation. By changing the stirring speeds, spindle and succulent-like morphologies have been obtained. UV-vis results show that the band gaps of SrMoO4 samples are sensitive to the stirring speed. As for the luminescent and photocatalytic properties, our experimental results clearly suggest that, compared with those samples without stirring, the luminescent and photocatalytic activities are enhanced with stirring in the hydrothermal preparation. The photodegradation of methyl blue （MB） over SrMoO4 system increases from 30% to 50%; with stirring, which may be related to small band gaps and porous surfaces. Our results indicate that stirring may he one important technique to improve the photocatalytic properties, especially in the process of hydrothermal method.

Core–Shell Structure and Luminescence of SrMoO_4:Eu^(3+)(10%) Phosphors

SrMoO4：Eu^3＋（10%） phosphors were produced via hydrothermal synthesis and co-precipitation.We systematically analyzed how the morphology and luminescence properties of the phosphors were affected by the synthesis conditions,including the p H of the precursor solution,stirring speed,and postsintering temperature.The samples synthesized at p H = 8 and 9 were spindle-like rods with a core-shell structure.When the stirring speed increased to Vs = 150 r/min,the core-shell structure disappeared.Photoluminescence measurements indicated that the Sr Mo O4：Eu^3＋samples under ultraviolet radiation produced strong red emission centered at 616 nm.The luminescence properties were greatly affected by the p H,stirring during hydrothermal reaction,and use of post-annealing.The related mechansim is discussed.

Fermi level unpinning achievement and transport modification in Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb laminated stacks by doping engineering

Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high performance.Interface passivation and doping engineering technology have become the main driving force to solve the issue.Herein,interface chemistry and transport characteristics determination of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the existence of less intrinsic oxides and elemental Sb at Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10^(5)A cm.The energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×10^(13)e Vcm,resulting in Fermi level unpinning.Carrier transport mechanisms of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb MOS capacitors as a function of temperature have been investigated systematically and some important electrical parameters have been extracted.Comprehensive analyses show that sputtering-derived Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb(x=0.32)gate stack has potential application in future Ga Sbbased metal-oxide-semiconductor field effect transistor(MOSFET)devices.