The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that a...The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that after the photodiodes being irradiated,the photocurrent decreases,especially for short wavelength of light. The dark current of the photodiodes with smaller active area decreases while increases for that with larger active area,and the response time shortens. The plane scanning experiment of laser beam indicates that the homogeneity of the device's surface is not influenced by the irradiation. The results prove that PIN photodiode shows relatively good radioresistance.展开更多
In order to reduce collector capacitance, the high speed Si phototransistor with grid pattern is presented. The advantages and disadvantages of grid pattern are analyzed. Through optimum design of geometries, device c...In order to reduce collector capacitance, the high speed Si phototransistor with grid pattern is presented. The advantages and disadvantages of grid pattern are analyzed. Through optimum design of geometries, device configurations and material parameters and reduction of the diffusion capacitance and the base resistance, the response time of Si phototransistor is shorter than 0.7 μs for the first time.展开更多
文摘The relationships between irradiation doses of γ ray and the main photoelectric characteristics of PIN photodiode or conventional photodiode with different structure were studied. The experimental results show that after the photodiodes being irradiated,the photocurrent decreases,especially for short wavelength of light. The dark current of the photodiodes with smaller active area decreases while increases for that with larger active area,and the response time shortens. The plane scanning experiment of laser beam indicates that the homogeneity of the device's surface is not influenced by the irradiation. The results prove that PIN photodiode shows relatively good radioresistance.
文摘In order to reduce collector capacitance, the high speed Si phototransistor with grid pattern is presented. The advantages and disadvantages of grid pattern are analyzed. Through optimum design of geometries, device configurations and material parameters and reduction of the diffusion capacitance and the base resistance, the response time of Si phototransistor is shorter than 0.7 μs for the first time.
