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THE DESIGN OF HIGH PERFORMANCE LINEAR TRANSCONDUCTOR
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作者 gao qingyun li xuechu qin shicai 《Journal of Electronics(China)》 2006年第1期107-108,共2页
An improved structure of linear transconductor is presented in this paper. It is analyzed in theory and simulated with Spectre based on 0.25μm CMOS process. The simulation results show that the differential input vol... An improved structure of linear transconductor is presented in this paper. It is analyzed in theory and simulated with Spectre based on 0.25μm CMOS process. The simulation results show that the differential input voltage of the proposed transconductor is 4.0Vpp(peak to peak), whereas the differential input voltage of the existing source degeneration structure is 2.2Vpp, when their nonlinear errors are required to be less than 0.15%. 展开更多
关键词 Design of CMOS circuit TRANSCONDUCTOR LINEARITY
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