The HfO2-based ferroelectric field effect transistors(FeFET)have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits.This article systematically ...The HfO2-based ferroelectric field effect transistors(FeFET)have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits.This article systematically investigates the transient response of negative capacitance(NC)fin field-effect transistors(FinFETs)through two kinds of self-built test schemes.By comparing the results with those of conventional FinFETs,we experimentally demonstrate that the on-current of the NC FinFET is not degraded in the MHz frequency domain.Further test results in the higher frequency domain show that the on-state current of the prepared NC FinFET increases with the decreasing gate pulse width at pulse widths below 100 ns and is consistently greater(about 80%with NC NMOS)than the on-state current of the conventional transistor,indicating the great potential of the NC FET for future high-frequency applications.展开更多
基金This project was supported in part by the Science and Technology program of Beijing Municipal Science and Technology Commission under grant Z201100006820084,in part by the National Natural Science Foundation of China(NSFC)under grants 92064003,61904194,91964202 and 61874135,in part by the Youth Innovation Promotion Association,Chinese Academy of Sciences under grants Y9YQ01R004 and Y2020037,in part by the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences under grants E0YS01X001 and E0290X03.
文摘The HfO2-based ferroelectric field effect transistors(FeFET)have been widely studied for their ability in breaking the Boltzmann limit and the potential to be applied to low-power circuits.This article systematically investigates the transient response of negative capacitance(NC)fin field-effect transistors(FinFETs)through two kinds of self-built test schemes.By comparing the results with those of conventional FinFETs,we experimentally demonstrate that the on-current of the NC FinFET is not degraded in the MHz frequency domain.Further test results in the higher frequency domain show that the on-state current of the prepared NC FinFET increases with the decreasing gate pulse width at pulse widths below 100 ns and is consistently greater(about 80%with NC NMOS)than the on-state current of the conventional transistor,indicating the great potential of the NC FET for future high-frequency applications.
