This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as precursors.And some improvements wer...This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as precursors.And some improvements were made to reduce the amount of metastable MoS_(2)-3 R.The morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting temperature.The characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 nm.Since the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.展开更多
基金financially supported by the National Natural Science Foundation of China (Nos.50835002 and 51105102)。
文摘This paper introduces a feasible process to achieve the molybdenum disulfide atomic layers using chemical vapor deposition(CVD) method,with molybdenum thin film and solid sulfur as precursors.And some improvements were made to reduce the amount of metastable MoS_(2)-3 R.The morphology of the acquired MoS_(2) layers,existing as triangular flakes or large-area continuous films,can be controlled by adjusting the synthesis time and reacting temperature.The characterization results show that the monolayer MoS_(2) flakes reveal a(002)-oriented growth on SiO_(2)/Si substrates,and its crystalline domain size is approximately 30 μm,and the thickness is 0.65 nm.Since the synthesis of MoS_(2)-3 R is restrained,the electronic transport properties of MoS_(2) with different layers were investigated,revealing that those properties equal with those of MoS_(2) samples prepared by exfoliation methods.
