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高性能超导相变边缘单光子探测器(特邀)
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作者 李佩展 钟家强 +7 位作者 张文 王争 耿悦 姚骑均 缪巍 任远 李婧 史生才 《光子学报》 EI CAS CSCD 北大核心 2023年第5期1-9,共9页
研究了钛膜的特性及调控机制,通过烘烤后处理工艺分析了临界温度随烘烤时间和烘烤温度的变化关系,发现临界温度随烘烤时间对数降低,但是随烘烤温度指数降低。拓展了二流体模型提取了超导相变边缘单光子探测器的温度灵敏度系数和电流灵... 研究了钛膜的特性及调控机制,通过烘烤后处理工艺分析了临界温度随烘烤时间和烘烤温度的变化关系,发现临界温度随烘烤时间对数降低,但是随烘烤温度指数降低。拓展了二流体模型提取了超导相变边缘单光子探测器的温度灵敏度系数和电流灵敏度系数,并结合脉冲响应得到了器件的热容,进一步理论计算了能量分辨率对器件临界温度的依存性。最终,在器件制备过程中集成光学腔体,在1550 nm波长的光子吸收效率接近100%。研制的超导相变边缘单光子探测器系统探测效率超过90%,能量分辨率约为0.5 eV,可分辨至少10个1550 nm光子,满足快速时变天体的观测需求。 展开更多
关键词 相变边缘探测器 单光子探测 能量分辨率 量子效率
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Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography 被引量:2
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作者 gen yue Yu Lei +2 位作者 Jun-Hui Die Hai-Qiang Jia Hong Chen 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第5期56-59,共4页
We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions... We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications. 展开更多
关键词 exp Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography
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Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction 被引量:1
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作者 gen yue Zhen Deng +9 位作者 Sen Wang Ran Xu Xinxin Li Ziguang Ma Chunhua Du Lu Wang Yang Jiang Haiqiang Jia Wenxin Wang Hong Chen 《Chinese Physics Letters》 SCIE CAS CSCD 2019年第5期64-66,共3页
Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PI... Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory.We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further. 展开更多
关键词 SI In PIN
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