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基于CsPbBr_(3)-MXene纳米结构的高线性度突触光电晶体管用于图像分类和边缘检测
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作者 代岩 陈耿旭 +5 位作者 黄伟龙 许晨晖 刘常飞 黄紫玉 郭太良 陈惠鹏 《Science China Materials》 SCIE EI CAS CSCD 2024年第7期2246-2255,共10页
人工光突触为克服数据存储和处理中的冯诺依曼瓶颈,提供了一种有效的解决方案.人工光突触通过消除带宽连接密度的权衡和低功耗,展现了其相较于电突触的优势.钙钛矿量子点由于其易于合成和良好的光电性能,在人工光突触中引起了广泛的关注... 人工光突触为克服数据存储和处理中的冯诺依曼瓶颈,提供了一种有效的解决方案.人工光突触通过消除带宽连接密度的权衡和低功耗,展现了其相较于电突触的优势.钙钛矿量子点由于其易于合成和良好的光电性能,在人工光突触中引起了广泛的关注.然而,有限的载流子迁移率和非线性性能阻碍了它在神经形态中的应用.本研究提出了一种吸附CsPbBr_(3)的MXene纳米结构(CsPbBr_(3)-MXene),即在MXene纳米片上原位生长CsPbBr_(3)量子点,并将其作为光电突触晶体管的吸光层,CsPbBr_(3)和MXene形成的异质结构增强了光电流的产生.在相同的光脉冲刺激下,与仅含CsPbBr_(3)的突触晶体管相比,CsPbBr_(3)-MXene突触晶体管的兴奋性突触后电流(EPSC)提高了24.6%.经过计算和比较,其线性度有了明显的改善(从4.586到1.099);此外,其对手写数字分类的识别准确率也显著提高(从86.13%到92.05%);边缘检测的F1分数也有所提高(从0.8165到0.9065),更加接近于1.这些提升表明这项工作将有助于神经计算领域的进一步发展. 展开更多
关键词 in-situ growth CsPbBr_(3)-attached MXene synaptic phototransistor pattern recognition accuracy image preproces-sing
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Temperature-controlled multisensory neuromorphic devices for artificial visual dynamic capture enhancement 被引量:2
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作者 gengxu chen Xipeng Yu +5 位作者 Changsong Gao Yan Dai Yanxue Hao Rengjian Yu Huipeng chen Tailiang Guo 《Nano Research》 SCIE EI CSCD 2023年第5期7661-7670,共10页
Multi-sensory neuromorphic devices(MND)have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data.However,the current multisensory artificial neuromorphic system is mainly based... Multi-sensory neuromorphic devices(MND)have broad potential in overcoming the structural bottleneck of von Neumann in the era of big data.However,the current multisensory artificial neuromorphic system is mainly based on unitary nonvolatile memory or volatile synaptic devices without intrinsic thermal sensitivity,which limits the range of biological multisensory perception and the flexibility and computational efficiency of the neural morphological computing system.Here,a temperature-dependent memory/synaptic hybrid artificial neuromorphic device based on floating gate phototransistors(FGT)is fabricated.The CsPbBr_(3)/TiO_(2)core–shell nanocrystals(NCs)prepared by in-situ pre-protection low-temperature solvothermal method were used as the photosensitive layer.The device exhibits remarkable multi-level visual memory with a large memory window of 59.6 V at room temperature.Surprisingly,when the temperature varies from 20 to 120℃back and forth,the device can switch between nonvolatile memory and volatile synaptic device with reconfigurable and reversible behaviors,which contributes to the efficient visual/thermal fusion perception.This work expands the sensory range of multisensory devices and promotes the development of memory and neuromorphic devices based on organic field-effect transistors(OFET). 展开更多
关键词 floating gate phototransistors perovskite nanocrystals temperature multisensory neuromorphic devices
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