Epitaxial van der Waals contacts for low schottky barrier MoS_(2) field effect transistors

Small contact resistance and low Schottky barrier height(SBH)are the keys to energy-efficient electronics and optoelectronics.Two-dimensional(2D)semiconductors-based field effect transistors(FETs),holding great promise for next-generation information circuits,still suffer from poor contact quality at the metal–semiconductor junction interface,which severely hinders their further applications.Here,a novel contact strategy is proposed,where Bi_(2)Te_(3)nanosheets with high conductivity were in-situ epitaxially grown on MoS_(2)as van der Waals contacts,which can effectively avoid the damage to MoS_(2)caused during the device manufacturing process,leading to a high-performance MoS_(2)FET.Moreover,the small work function difference between Bi_(2)Te_(3)and MoS_(2)(Bi_(2)Te_(3):4.31 eV,MoS_(2):4.37 eV,measured by Kelvin probe force microscopy(KPFM)),enables small band bending and Ohmic contact at the junction interface.Electrical characterizations indicate that the MoS_(2)FET device with Bi_(2)Te_(3)contacts possesses a high current on/off ratio(5×107),large effective carrier mobility(90 cm^(2)/(V·s)),and low flat-band SBH(60 meV),which is favorable as compared with MoS_(2)FET with traditional Cr/Au electrodes contacts,and superior to the vast majority of the reported chemical vapor deposition(CVD)MoS_(2)-based FET device.The demonstration of epitaxial van der Waals Bi_(2)Te_(3)contacts will facilitate the application of 2D MoS_(2)nanosheet in next-generation low-power consumption electronics and optoelectronics.

Dual-channel type tunable field-effect transistors based on vertical bilayer WS2(1−x)Se2x/SnS2 heterostructures

Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices.Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostructure-based electronics and optoelectronics as well as their optimization.Here,we report for the first time a two-step chemical vapor deposition approach for a series of WS2(1−x)Se2x/SnS2 vertical heterostructures with high-quality and large areas.The steady-state photoluminescence results exhibit an obvious composition-related quenching ratio,revealing a strong coherence between the band offset and the charge transfer efficiency at the junction interface.Based on the achieved heterostructures,dual-channel backgate field-effect transistors were successfully designed and exhibited typical composition-dependent transport behaviors,and pure n-type unipolar transistors to ambipolar transistors were realized in such systems.The direct vapor growth of these novel vertical WS2(1−x)Se2x/SnS2 heterostructures could offer an interesting system for probing new physical properties and provide a series of layered heterostructures for high-quality devices.

Enhanced perovskite electronic properties via A-site cation engineering

Organic-inorganic halide perovskites have emerged as excellent candidates for low-cost photovoltaics and optoelectronics.While the predominant recent trend in designing perovskites for efficient and stable solar cells has been to mix different A-site cations,the role of A-site cations is still limited to tune the lattice and bandgap of perovskites.Herein we compare the optoelectronic properties of acetamidinum(Ace)and guanidinium(Gua)mixed methylammonium lead iodide perovskites and shed a light on the hidden role of A-site cation on the carrier mobility of mixed-cation lead iodide perovskites.The cations do not affect the bandgap of the perovskites since the orbitals from Ace and Gua do not contribute to the band edges of the material.However,the mobility of the Ace mixed perovskite is significantly enhanced to be an order of magnitude higher than that of the pristine perovskite.We apply the Ace mixed perovskite in hole-conductor-free printable mesoscopic perovskite solar cells and obtain a stabilized PCE of over 18%(certified 17.7%),which is the highest certified efficiency so far.