Electrical parameters of n-type InPxAs1-x solid solution crystals have been investigated in the range of 4.2-300 K. Theoretical calculations of current carriers mobility have been carried out and they are in good agre...Electrical parameters of n-type InPxAs1-x solid solution crystals have been investigated in the range of 4.2-300 K. Theoretical calculations of current carriers mobility have been carried out and they are in good agreement with experimental results. The contribution of current carriers scattering main mechanisms has been determined. Comparison of experimental and theoretical data has shown minor contribution of disorder scattering associated with the disordered arrangement of atoms in InPxAs1-x solid solutions. Contribution of the disorder scattering increases with increasing of InP composition in solid solutions system at fixed temperatures and weakens with lowering of temperature and never dominates. A maximal share of the ＂alloy＂ scattering observed in experimental samples of lnPxAs1-x solid solutions differs from the similar scattering in SiGe alloys. It does not exceed - 20% of total scattering at 300 K and - 10% at lower temperature. A relative small contribution of disorder scattering is important for the devices designed on the base of InPxAs1-x system.展开更多
Transport phenomena, namely electrical properties of n-type crystals of InAs and InP solid solutions were investigated in the temperature range 4.2-300 K before and after irradiation with fast neutrons and electrons. ...Transport phenomena, namely electrical properties of n-type crystals of InAs and InP solid solutions were investigated in the temperature range 4.2-300 K before and after irradiation with fast neutrons and electrons. Maximum integral fluence of fast neutrons was 2× 1018 n.cm2. At the irradiation with 3 MeV electrons, the integrated electron fluence was 5 × 1017 e·cm2. We show that point type defects play an important role in the radiation processes. They are effective scattering centers of charge carriers in lnAs, InP and InPxASl.x solid solutions irradiated with 3 MeV energy electrons, especially for InAs-rich solid solutions. The charge carriers scattering mechanisms and accordingly the values of mobility are defined by disordered regions in samples irradiated with fast neutrons. The presence of minimum mobility value in composition dependence of mobility disappears after fast neutrons irradiation, which indicates that the contribution of ＂alloy＂ scattering is negligibly small in crystals irradiated with fast neutrons at both room and low temperatures.展开更多
The phenomenon of mutual compensation of radiation donors and acceptors is discovered in IrtAs-InP solid solutions. This phenomenon is a result of opposite directed radiation processes, taking place in the irradiated ...The phenomenon of mutual compensation of radiation donors and acceptors is discovered in IrtAs-InP solid solutions. This phenomenon is a result of opposite directed radiation processes, taking place in the irradiated InAs-InP solid solutions. The radiation creates donor type defects in the sublattice of InAs and electrons concentration increases. The contrary process occurs in the sublattice of InP. Radiation originates acceptor type defects and the carrier concentration decreases. The noted effect is going on in the all alloy composition. Exact mutual compensation of radiation donors and acceptors is achieved by selecting of the alloys definite composition. As a result, the main parameter of semiconductors-electrons concentration remains constant even under the hard radiation with fluences of Ф = 2 × 10^18 fast neutrons/cm^2. So there has been created radiation-resistant material.展开更多
文摘Electrical parameters of n-type InPxAs1-x solid solution crystals have been investigated in the range of 4.2-300 K. Theoretical calculations of current carriers mobility have been carried out and they are in good agreement with experimental results. The contribution of current carriers scattering main mechanisms has been determined. Comparison of experimental and theoretical data has shown minor contribution of disorder scattering associated with the disordered arrangement of atoms in InPxAs1-x solid solutions. Contribution of the disorder scattering increases with increasing of InP composition in solid solutions system at fixed temperatures and weakens with lowering of temperature and never dominates. A maximal share of the ＂alloy＂ scattering observed in experimental samples of lnPxAs1-x solid solutions differs from the similar scattering in SiGe alloys. It does not exceed - 20% of total scattering at 300 K and - 10% at lower temperature. A relative small contribution of disorder scattering is important for the devices designed on the base of InPxAs1-x system.
文摘Transport phenomena, namely electrical properties of n-type crystals of InAs and InP solid solutions were investigated in the temperature range 4.2-300 K before and after irradiation with fast neutrons and electrons. Maximum integral fluence of fast neutrons was 2× 1018 n.cm2. At the irradiation with 3 MeV electrons, the integrated electron fluence was 5 × 1017 e·cm2. We show that point type defects play an important role in the radiation processes. They are effective scattering centers of charge carriers in lnAs, InP and InPxASl.x solid solutions irradiated with 3 MeV energy electrons, especially for InAs-rich solid solutions. The charge carriers scattering mechanisms and accordingly the values of mobility are defined by disordered regions in samples irradiated with fast neutrons. The presence of minimum mobility value in composition dependence of mobility disappears after fast neutrons irradiation, which indicates that the contribution of ＂alloy＂ scattering is negligibly small in crystals irradiated with fast neutrons at both room and low temperatures.
文摘The phenomenon of mutual compensation of radiation donors and acceptors is discovered in IrtAs-InP solid solutions. This phenomenon is a result of opposite directed radiation processes, taking place in the irradiated InAs-InP solid solutions. The radiation creates donor type defects in the sublattice of InAs and electrons concentration increases. The contrary process occurs in the sublattice of InP. Radiation originates acceptor type defects and the carrier concentration decreases. The noted effect is going on in the all alloy composition. Exact mutual compensation of radiation donors and acceptors is achieved by selecting of the alloys definite composition. As a result, the main parameter of semiconductors-electrons concentration remains constant even under the hard radiation with fluences of Ф = 2 × 10^18 fast neutrons/cm^2. So there has been created radiation-resistant material.
