Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on gla...Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.展开更多
This paper reports the realization of planar Schottky diodes based on nanorod ZnO thin film.The nanorod ZnO thin film was fabricated by hydrothermal technique on boron doped p-type Si(100)substrate.The Ag//ZnO/Al plan...This paper reports the realization of planar Schottky diodes based on nanorod ZnO thin film.The nanorod ZnO thin film was fabricated by hydrothermal technique on boron doped p-type Si(100)substrate.The Ag//ZnO/Al planar diode operating with voltage bias from–3 to 3 V.The I–V characteristics clearly indicate that the devices have rectifying performance.The thermionic emission theory governs the current across the studied Schottky diode.The device achieved a turn-on voltage of 0.9 V,barrier height 0.69 e V and saturation current of 1.2×10^(–6)A.The diode shows a very large ideality factor(n>>2)which is attributed to high interface trap concentration.The surface topology was investigated by scanning electron microscope(SEM).The structural properties of the nanostructured ZnO thin film were characterized by X-ray diffraction(XRD).The SEM images reveal that the ZnO nanorods grow perpendicular to the substrate with uniformity and high density.The XRD pattern illustrates the dominant peak appearing at(002).This intense peak indicates the c-axis orientated phase of the wurtzite ZnO structure.It demonstrates that the crystals grow uniformly perpendicular to the substrate surface in good agreement with the SEM images.展开更多
基金support by Indo-Iraq Cultural Exchange Program of ICCR (Indian Council for Cultural Relations)
文摘Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.
文摘This paper reports the realization of planar Schottky diodes based on nanorod ZnO thin film.The nanorod ZnO thin film was fabricated by hydrothermal technique on boron doped p-type Si(100)substrate.The Ag//ZnO/Al planar diode operating with voltage bias from–3 to 3 V.The I–V characteristics clearly indicate that the devices have rectifying performance.The thermionic emission theory governs the current across the studied Schottky diode.The device achieved a turn-on voltage of 0.9 V,barrier height 0.69 e V and saturation current of 1.2×10^(–6)A.The diode shows a very large ideality factor(n>>2)which is attributed to high interface trap concentration.The surface topology was investigated by scanning electron microscope(SEM).The structural properties of the nanostructured ZnO thin film were characterized by X-ray diffraction(XRD).The SEM images reveal that the ZnO nanorods grow perpendicular to the substrate with uniformity and high density.The XRD pattern illustrates the dominant peak appearing at(002).This intense peak indicates the c-axis orientated phase of the wurtzite ZnO structure.It demonstrates that the crystals grow uniformly perpendicular to the substrate surface in good agreement with the SEM images.
