The resistive switching characteristic of SiO2 thin film in electrolyte-oxide-semiconductor （EOS） struc- tures under certain bias voltage is reported. To analyze the mechanism of the resistive switching characterist...The resistive switching characteristic of SiO2 thin film in electrolyte-oxide-semiconductor （EOS） struc- tures under certain bias voltage is reported. To analyze the mechanism of the resistive switching characteristic, a batch olEOS structures were fabricated under various conditions and their electrical properties were measured with a set of three-electrode systems. A theoretical model based on the formation and rupture of conductive filaments in the oxide layer is proposed to reveal the mechanism of the resistive switching characteristic, followed by an experimental investigation of Auger electron spectroscopy （AES） and secondary ion mass spectroscopy （SIMS） to verify the proposed theoretical model. It is found that different threshold voltage, reverse leakage current and slope value features of the switching I-V characteristic can be observed in different EOS structures with different elec- trolyte solutions as well as different SiO2 layers made by different fabrication processes or in different thicknesses. With a simple fabrication process and significant resistive switching characteristic, the EOS structures show great potential for chemical/biochemical applications.展开更多
基金supported by the National Natural Science Foundation of China(No.61274116)the National Basic Research Program of China(No.2015CB352100)
文摘The resistive switching characteristic of SiO2 thin film in electrolyte-oxide-semiconductor （EOS） struc- tures under certain bias voltage is reported. To analyze the mechanism of the resistive switching characteristic, a batch olEOS structures were fabricated under various conditions and their electrical properties were measured with a set of three-electrode systems. A theoretical model based on the formation and rupture of conductive filaments in the oxide layer is proposed to reveal the mechanism of the resistive switching characteristic, followed by an experimental investigation of Auger electron spectroscopy （AES） and secondary ion mass spectroscopy （SIMS） to verify the proposed theoretical model. It is found that different threshold voltage, reverse leakage current and slope value features of the switching I-V characteristic can be observed in different EOS structures with different elec- trolyte solutions as well as different SiO2 layers made by different fabrication processes or in different thicknesses. With a simple fabrication process and significant resistive switching characteristic, the EOS structures show great potential for chemical/biochemical applications.
