As the emerging member of zero-dimension transition metal dichalcogenide,WSe2 quantum dots(QDs)have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size.However...As the emerging member of zero-dimension transition metal dichalcogenide,WSe2 quantum dots(QDs)have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size.However,low power consumption and high reliability are still challenges for WSe_(2) QDs-based memristors as synaptic devices.展开更多
Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.Ho...Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.However,due to the high dielectric loss of traditional ferroelectric materials,the durability of ferroelectric memristors and Si based integration have a great challenge.Here,we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO_(3)(BTO)-CeO_(2) films.The BTO-CeO_(2) memristors exhibit a stable resistance switching behavior at a high temperature of 100℃ due to higher Curie temperatures of BTO-CeO_(2) films with in-plane compressive strain.And the endurance of the device can reach the order of magnitude of 1×106 times.More importantly,the device has excellent functions for simulating artificial synaptic behavior,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression,spike-time-dependent plasticity,and short and long-term plasticity.Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model,in which recognition accuracy of digital can reach 86.78%after 20 training iterations.These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.展开更多
基金supported by the National Key R&D Plan“Nano Frontier”Key Special Project(2021YFA1200502)the Cultivation Projects of National Major R&D Project(92164109)+13 种基金the National Natural Science Foundation of China(61674050 and 61874158)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7)Hebei Basic Research Special Key Project(F2021201045)the Natural Science Foundation of Hebei Province(F2022201054 and F2021201022)the Advanced Talents Incubation Program of Hebei University(521000981426,521100221071,and 521000981363)Baoding Science and Technology Plan Project(2172P011)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)the Outstanding Youth Scientific Research and Innovation Team of Hebei University(605020521001)the Special Support Funds for National High Level Talents(041500120001)the Science and Technology Project of Hebei Education Department(QN2020178 and QN2021026)the Interdisciplinary Key Research Program of Natural Science of Hebei University(DXK202101)the Institute of Life Sciences and Green Development(521100311)the Post-graduate’s Innovation Fund Project of Hebei University(HBU2022ss021).
基金supported by the National Key R&D Plan“Nano Frontier”Key Special Project(2021YFA1200502)the National Natural Science Foundation of China(62004056,61874158,and 62104058)+12 种基金the Cultivation Projects of National Major R&D Project(92164109)the Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(XDB44000000-7)Hebei Basic Research Special Key Project(F2021201045)the Support Program for the Top Young Talents of Hebei Province(70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(SLRC2019018)the Interdisciplinary Research Program of Natural Science of Hebei University(DXK202101)the Institute of Life Sciences and Green Development(521100311)the Natural Science Foundation of Hebei Province(F2022201054 and F2021201022)the Outstanding Young Scientific Research and Innovation Team of Hebei University(605020521001)the Special Support Funds for National High Level Talents(041500120001)the Advanced Talents Incubation Program of the Hebei University(521000981426,521100221071,and 521000981363)the Science and Technology Project of Hebei Education Department(QN2020178 and QN2021026)Baoding Science and Technology Plan Project(2172P011)。
基金This work was financially supported by the National Natural Science Foundation of China(No.62104058)the Natural Science Foundation of Hebei Province(No.F2021201022)+14 种基金the Science and Technology Project of Hebei Education Department(No.QN2020178)the Advanced Talents Incubation Program of the Hebei University(No.521000981363)This work was also supported by the National Key R&D Plan“Nano Frontier”Key Special Project(No.2021YFA1200502)Cultivation Projects of National Major R&D Project(No.92164109)National Natural Science Foundation of China(Nos.61874158 and 62004056)Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences(No.XDB44000000-7)HebeiBasic Research Special KeyProject(No.F2021201045)the Support Program for the Top Young Talents of Hebei Province(No.70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018)Outstanding Young Scientific Research and Innovation Team of Hebei University(No.605020521001)Special Support Funds for National High Level Talents(No.041500120001)High-level Talent Research Startup Project of Hebei University(No.521000981426)the Science and Technology Project of Hebei Education Department(No.QN2021026)the Advanced Talents Incubation Program of the Hebei University(No.521000981426)the Natural Science Foundation of Hebei Province(No.F2021201009).
文摘As the emerging member of zero-dimension transition metal dichalcogenide,WSe2 quantum dots(QDs)have been applied to memristors and exhibited better resistance switching characteristics and miniaturization size.However,low power consumption and high reliability are still challenges for WSe_(2) QDs-based memristors as synaptic devices.
基金supported by the National key R&D plan"nano frontier"key special project(No.2021YFA1200502)Cultivation projects of national major R&D project(No.92164109)+11 种基金the National Natural Science Foundation of China(Nos.61874158,62004056,and 62104058)Special project of strategic leading science and technology of Chinese Academy of Sciences(No.XDB44000000-7)Hebei Basic Research Special Key Project(No.F2021201045)the Support Program for the Top Young Talents of Hebei Province(No.70280011807)the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province(No.SLRC2019018)Interdisciplinary Research Program of Natural Science of Hebei University(No.DXK202101)Institute of Life Sciences and Green Development(No.521100311)Natural Science Foundation of Hebei Province(Nos.F2022201054 and F2021201022)Outstanding young scientific research and innovation team of Hebei University(No.605020521001)Special support funds for national high level talents(No.041500120001)Advanced Talents Incubation Program of Hebei University(Nos.521000981426,521100221071,and 521000981363)Science and Technology Project of Hebei Education Department(Nos.QN2020178 and QN2021026).
文摘Ferroelectric memristors,as one of the most potential non-volatile memory to meet the rapid development of the artificial intelligence era,have the comprehensive function of simulating brain storage and calculation.However,due to the high dielectric loss of traditional ferroelectric materials,the durability of ferroelectric memristors and Si based integration have a great challenge.Here,we report a silicon-based epitaxial ferroelectric memristor based on self-assembled vertically aligned nanocomposites BaTiO_(3)(BTO)-CeO_(2) films.The BTO-CeO_(2) memristors exhibit a stable resistance switching behavior at a high temperature of 100℃ due to higher Curie temperatures of BTO-CeO_(2) films with in-plane compressive strain.And the endurance of the device can reach the order of magnitude of 1×106 times.More importantly,the device has excellent functions for simulating artificial synaptic behavior,including excitatory post-synaptic current,paired-pulse facilitation,paired-pulse depression,spike-time-dependent plasticity,and short and long-term plasticity.Digits recognition ability of the memristor devices is evaluated though a single-layer perceptron model,in which recognition accuracy of digital can reach 86.78%after 20 training iterations.These results provide new way for epitaxial composite ferroelectric films as memristor medium with high temperature intolerance and better durability integrated on silicon.
