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Structural and photocatalytic properties of TiO_2 films fabricated on silicon substrates by MOCVD method 被引量:3
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作者 YANGJia-long LIYing +3 位作者 WANGFu ZUOLiang gu-chulyi WongYongChoi 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2005年第1期146-151,共6页
Silicon(111) and Silicon(100) were employed for fabrication of TiO 2 films by metal organic chemical vapor deposition(MOCVD). Titanium(IV) isopropoxide(Ti[O(C 3H 7) 4]) was used as a precursor. The as deposited TiO 2 ... Silicon(111) and Silicon(100) were employed for fabrication of TiO 2 films by metal organic chemical vapor deposition(MOCVD). Titanium(IV) isopropoxide(Ti[O(C 3H 7) 4]) was used as a precursor. The as deposited TiO 2 films were characterized with FE\|SEM, XRD and AFM. The photocatalytic properties were investigated by decomposition of aqueous OrangeⅡ. And UV VIS photospectrometer was used for checking the absorption characteristics and photocatalytic degradation activity. The crystalline and structural properties of TiO 2 film had crucial influences on the photodegradation efficiency. For MOCVD in situ deposited films on Si substrates, the photoactivities varied following a shape of “M': at lower(350℃), middle(500℃) and higher(800℃) temperature of deposition, relative lower photodegradation activities were observed. At 400℃ and 700℃ of deposition, relative higher efficiencies of degradation were obtained, because one predominant crystallite orientation could be obtained as deposition at the temperature of two levels, especially a single anatase crystalline TiO 2 film could be obtained at 700℃. 展开更多
关键词 MOCVD photocatalystic degradation Silicon(100) Silicon(111)
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