The 808-nm vertical cavity surface emitting laser(VCSEL) with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is designed and fabricated. Compared with the VCSELs with Al_(0.05)Ga_(0.95)As/Al_(...The 808-nm vertical cavity surface emitting laser(VCSEL) with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is designed and fabricated. Compared with the VCSELs with Al_(0.05)Ga_(0.95)As/Al_(0.3)Ga_(0.7)As quantum wells, the VCSEL with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is demonstrated to possess higher power conversion efficiency(PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30°C. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 61804175)the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. ZDBS-LY-JSC031)the China Postdoctoral Science Foundation (Grant No. BX20200358)。
文摘The 808-nm vertical cavity surface emitting laser(VCSEL) with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is designed and fabricated. Compared with the VCSELs with Al_(0.05)Ga_(0.95)As/Al_(0.3)Ga_(0.7)As quantum wells, the VCSEL with strained In_(0.13)Ga_(0.75)Al_(0.12)As/Al_(0.3)Ga_(0.7)As quantum wells is demonstrated to possess higher power conversion efficiency(PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30°C. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.
