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Atmospheric Degradation and Performance Recovery of Two-Dimensional MoS2 Field Effect Transistor
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作者 Lifei Sun Zhixing Lu +5 位作者 Rui xu Zhewei Li guanchen xu Fengen Chen Zhihai Cheng Liying Jiao 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2023年第21期2832-2836,共5页
Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into o... Two-dimensional(2D)transition metal dichalcogenides(TMDCs)showed great potentials in 2D nanoelectronic devices due to their abundant and unique properties.The performance stability of the 2D TMDCs devices turns into one of the keys for their practical applications but has been rarely explored.Here,we investigated stability of MoS_(2)devices in ambient condition and contributed the device performance degradation to the surface oxidation of the contact metals with low work function,which increased the contact barrier and hindered the electron injection.We developed a new approach to recover the performance of the aged devices through the selective doping of contacts with organolithium,which prolonged the lifetime of MoS_(2)devices.Our work not only provides important insights into the stability of 2D TMDCs devices,but also opens up a new avenue for optimizing the performance of 2D MoS_(2)devices. 展开更多
关键词 MoS_(2) Field effect transistor Atmospheric degradation Performance recovery SEMICONDUCTORS DOPING Oxidation
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Metallic and ferromagnetic MoS2 nanobelts with vertically aligned edges 被引量:2
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作者 guanchen xu Xinsheng Wang +5 位作者 Yupeng Sun Xiao Chen Jingying Zheng Lifei Sun Liying Jiao Jinghong Li 《Nano Research》 SCIE EI CAS CSCD 2015年第9期2946-2953,共8页
Edge effects are predicted to significantly impact the properties of low dimensional materials with layered structures. The synthesis of low dimensional materials with copious edges is desired for exploring the effect... Edge effects are predicted to significantly impact the properties of low dimensional materials with layered structures. The synthesis of low dimensional materials with copious edges is desired for exploring the effects of edges on the band structure and properties of these materials. Here we developed an approach for synthesizing MoS2 nanobelts terminated with vertically aligned edges by sulfurizing hydrothermally synthesized MoO3 nanobelts in the gas phase through a kinetically driven process; we then investigated the electrical and magnetic properties of these metastable materials. These edge-terminated MoS2 nanobelts were found to be metallic and ferromagnetic, and thus dramatically different from the semiconducting and nonmagnetic two-dimensional (2D) and three-dimensional (3D) 2H-MoS2 materials. The transitions in electrical and magnetic properties elucidate the fact that edges can tune the properties of low dimensional materials. The unique structure and properties of this one-dimensional (1D) MoS2 material will enable its applications in electronics, spintronics, and catalysis. 展开更多
关键词 MOS2 two-dimensional (2D)atomic crystal nanobelt edge effect metallic ferromagnetic
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Growth of single-walled carbon nanotubes from Ag15 cluster catalysts 被引量:1
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作者 Dake Hu Xin He +3 位作者 Lifei Sun guanchen xu Liying Jiao Liang Zhao 《Science Bulletin》 SCIE EI CAS CSCD 2016年第12期917-920,共4页
Chirality-specific growth of single-walled carbon nanotubes(SWNTs) remains a challenge for their practical applications in electronics. Here, we explored the surface growth of SWNTs by utilizing the atomic-precise sil... Chirality-specific growth of single-walled carbon nanotubes(SWNTs) remains a challenge for their practical applications in electronics. Here, we explored the surface growth of SWNTs by utilizing the atomic-precise silver cluster complex [Ag_(15){1,3,5–(C:C)_3–C_6H_3}_2(Py[8])_3–(CF_3SO_3)_3](CF_3SO_3)_6(Py[8] is abbreviation for octamethylazacalix[8]pyridine) as a catalyst precursor. The diameters of most acquired SWNTs distributed in the range of 1.2–1.4 nm, which is suitable for making high performance field-effect transistors. The high quality of the obtained SWNTs was evidenced by Raman spectroscopy and electrical measurements. Successful growth of high quality SWNTs in this study foresees that rational design of metal-organic complexes as growth catalysts can open up a new avenue for the controllable synthesis of SWNTs. 展开更多
关键词 单壁碳纳米管 催化剂前体 表面生长 簇合物 金属有机配合物 场效应晶体管 SWNTS 电子应用
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Highly crystalline ReSe2 atomic layers synthesized by chemical vapor transport 被引量:2
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作者 Lei Xing Xingxu Yan +7 位作者 Jingying Zheng guanchen xu Zhixing Lu Lina Liu Jinghui Wang Peng Wang Xiaoqing Pan Liying Jiao 《InfoMat》 SCIE CAS 2019年第4期552-558,共7页
Two-dimensional (2D) anisotropic rhenium diselenide (ReSe2) has attracted lots ofattention due to its promising applications in electronics and optoelectronics. However,controlled synthesis of high quality ultrathin R... Two-dimensional (2D) anisotropic rhenium diselenide (ReSe2) has attracted lots ofattention due to its promising applications in electronics and optoelectronics. However,controlled synthesis of high quality ultrathin ReSe2 remains as a challenge.Here we developed an approach for synthesizing high quality 2D ReSe2 flakes witha thickness down to monolayer by chemical vapor transport (CVT) through carefullytuning the growth kinetics. The atomic structures and anisotropy of theobtained ReSe2 flakes were intensively characterized with scanning transmissionelectron microscope and angle-resolved polarized Raman spectroscopy. Fieldeffecttransistors fabricated on the CVT-grown ReSe2 flakes showed n-typesemiconducting behavior with an on/off current ratio of 105 and a mobility up to5 cm2 V−1 s−1, which is comparable to mechanically exfoliated flakes and isobvious higher than the samples synthesized with other approaches. This study notonly make high quality 2D ReSe2 easily accessible for both fundamental and applicationexplorations but also sheds new lights on the chemical synthesis of otheranisotropic 2D materials. 展开更多
关键词 ANISOTROPY chemical vapor transport field-effect transistor rhenium diselenide two-dimensional
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