On-chip silicon light source： from photonics to plasmonics

实际的硅 photonic 相连现在在实际的硅光来源的实现以后变得可能，在由结合的 IIIV 半导体和硅的混合集成起一个基本作用的地方。Photonic 相连实质地驱散更少的力量并且比那些提供显著地更大的信息带宽电子相连；然而，一个新兴的问题是在 photonic 和电子部件之间的尺寸失配什么时候在一个薄片上综合。因此，出现 plasmonic 来源与深深地亚波长尺寸作为为在薄片上的基于 Si 的轻来源互连的下一代在强烈调查下面。在这份报纸，我们将在这个话题上考察一些最近的成就。

4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects

A 4 –λ hybrid InGaAsP-Si evanescent laser array is obtained by bonding III–V distributed feedback lasers to a silicon on insulator(SOI) substrate using a selective area metal bonding technique. Multiple wavelengths are realized by varying the width of the III–V ridge waveguide. The threshold current is less than 10 mA for all wavelength channels under continuous-wave(CW) operation at room temperature, and the lowest threshold current density is 0.76 kA∕cm2. The side mode suppression ratio(SMSR) is higher than 40 dB for all wavelength channels when the injection current is between 20 mA and 70 mA at room temperature, and the highest SMSR is up to 51 dB. A characteristic temperature of 51 K and thermal impedance of 144°C/W are achieved on average.The 4 –λ hybrid InGaAsP-Si evanescent laser array exhibits a low threshold and high SMSR under CW operation at room temperature. The low power consumption of this device makes it very attractive for on-chip optical interconnects.