As a novel two-dimensional(2D)semiconductor material with biocompatibility and ferromagnetic properties,Nb_(3)Cl_(8)exhibits a great prospect in the field of implantable electrical equipment.In this work,the effects o...As a novel two-dimensional(2D)semiconductor material with biocompatibility and ferromagnetic properties,Nb_(3)Cl_(8)exhibits a great prospect in the field of implantable electrical equipment.In this work,the effects of the light illumination and the gate voltage on the desorption of O_(2)molecules from Nb_(3)Cl_(8)were systemically investigated via the in situ electrical transport characterization in the vacuum environment.The experimental results showed that the light illumination and the negative gate voltage could enhance the desorption of oxygen molecules while the positive gate voltage could promote the re-adsorption of O_(2).The multi-bit storage function was demonstrated via adjusting the p-doping effect caused by oxygen adsorption.A novel mechanism of optical writing and electrical erasing in this Nb_(3)Cl_(8)memristor was proposed,which was in coincidence with the expected results of the control experiment in air.These results shed light on the great potential of Nb_(3)Cl_(8)in high-density data storage,neuromorphic,wearable applications and implantable devices application.展开更多
基金This work was financially supported by the National Natural Science Foundation of China(Nos.62074025 and 52002051)the Applied Basic Research Program of Sichuan Province(No.2020ZYD014)+2 种基金Sichuan Province Key Laboratory of Display Science and Technology,Postdoctoral Innovative Talent Supporting Program(No.BX20190060)China Postdoctoral Science Foundation(No.2019M663463)the Fundamental Research Funds for the Central Universities,SCUT(No.ZYGX2020J009).
文摘As a novel two-dimensional(2D)semiconductor material with biocompatibility and ferromagnetic properties,Nb_(3)Cl_(8)exhibits a great prospect in the field of implantable electrical equipment.In this work,the effects of the light illumination and the gate voltage on the desorption of O_(2)molecules from Nb_(3)Cl_(8)were systemically investigated via the in situ electrical transport characterization in the vacuum environment.The experimental results showed that the light illumination and the negative gate voltage could enhance the desorption of oxygen molecules while the positive gate voltage could promote the re-adsorption of O_(2).The multi-bit storage function was demonstrated via adjusting the p-doping effect caused by oxygen adsorption.A novel mechanism of optical writing and electrical erasing in this Nb_(3)Cl_(8)memristor was proposed,which was in coincidence with the expected results of the control experiment in air.These results shed light on the great potential of Nb_(3)Cl_(8)in high-density data storage,neuromorphic,wearable applications and implantable devices application.
