Detection of local strain at the nanometer scale with high sensitivity remains challenging.Here we report near-field infrared nano-imaging of local strains in bilayer graphene by probing strain-induced shifts of phono...Detection of local strain at the nanometer scale with high sensitivity remains challenging.Here we report near-field infrared nano-imaging of local strains in bilayer graphene by probing strain-induced shifts of phonon frequency.As a non-polar crystal,intrinsic bilayer graphene possesses little infrared response at its transverse optical phonon frequency.The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon.The activated phonon further interacts with continuum electronic transitions,and generates a strong Fano resonance.The resulted Fano resonance features a very sharp near-field infrared scattering peak,which leads to an extraordinary sensitivity of-0.002%for the strain detection.Our results demonstrate the first nano-scale near-field Fano resonance,provide a new way to probe local strains with high sensitivity in non-polar crystals,and open exciting possibilities for studying strain-induced rich phenomena.展开更多
All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. T...All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.展开更多
基金Supported by the National Key Research and Development Program of China (Grant No.2016YFA0302001)the National Natural Science Foundation of China (Grant Nos.11774224,12074244,11521404,and 61701394)+1 种基金support from the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learningadditional support from a Shanghai talent program。
文摘Detection of local strain at the nanometer scale with high sensitivity remains challenging.Here we report near-field infrared nano-imaging of local strains in bilayer graphene by probing strain-induced shifts of phonon frequency.As a non-polar crystal,intrinsic bilayer graphene possesses little infrared response at its transverse optical phonon frequency.The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon.The activated phonon further interacts with continuum electronic transitions,and generates a strong Fano resonance.The resulted Fano resonance features a very sharp near-field infrared scattering peak,which leads to an extraordinary sensitivity of-0.002%for the strain detection.Our results demonstrate the first nano-scale near-field Fano resonance,provide a new way to probe local strains with high sensitivity in non-polar crystals,and open exciting possibilities for studying strain-induced rich phenomena.
基金This work was supported by the National Basic Research Program of China （973 Program） （Nos. 2013CB934500 and 2013CBA01600）, the National Natural Science Foundation of China （NSFC） （Nos. 61325021, 91223204, 11174333 and 11204358）, and the Chinese Academy of Sciences.
文摘All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature （RT） between a bilayer graphene channel and a multilayer graphene electrode can be as low as -5 Ω.·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.
