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Integration of GaN analog building blocks on p-GaN wafers for GaN ICs 被引量:1
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作者 Xiangdong Li Karen Geens +6 位作者 Nooshin Amirifar Ming Zhao Shuzhen You Niels Posthuma Hu Liang guido groeseneken Stefaan Decoutere 《Journal of Semiconductors》 EI CAS CSCD 2021年第2期113-116,共4页
We demonstrate the key module of comparators in GaN ICs,based on resistor-transistor logic(RTL)on E-mode wafers in this work.The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor... We demonstrate the key module of comparators in GaN ICs,based on resistor-transistor logic(RTL)on E-mode wafers in this work.The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load.The function of the RTL comparators is finally verified by a undervoltage lockout(UVLO)circuit.The compatibility of this circuit with the current p-GaN technology paves the way for integrating logic ICs together with the power devices. 展开更多
关键词 P-GAN resistor-transistor logic(RTL) comparator undervoltage lockout(UVLO) GaN ICs
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