Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnac...Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy （MBE） has been investigated by photoluminescence （PL） measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high break- down voltage of larger than 41 V （1 〈 10μA）. In addition, a high responsivity of 0.81 A/W at 1.31/~m and 0.97 A/W at 1.55μm was obtained in the developed PIN photodetector.展开更多
Heusler alloys are a kind of intermetallic compounds with highly-ordered arrangement of atoms.Many attractive functional materials have been developed in Heusler alloys.Due to the application requirements of materials...Heusler alloys are a kind of intermetallic compounds with highly-ordered arrangement of atoms.Many attractive functional materials have been developed in Heusler alloys.Due to the application requirements of materials in new-generation electronic devices and spintronics devices,one-dimensional nanostructured Heusler alloys with special functions are needed.In this work,it is proposed to grow one-dimensional Heusler alloy nanostructures(1D-HA-NSs)by magnetron sputtering plus anodic aluminum oxide(AAO)template.Nanowires with different shapes,amorphous-coated(AC)nanowires and nanotubes were successfully grown for several Heusler alloys.AC nanowires are the unique products of our method.Heusler alloy nanotubes are reported for the first time.The one-dimensional nanostructures grow on the surface of the AAO substrate rather than in the holes.The top of the pore wall is the nanostructure growth point,the shape of which determines the morphology of the nanostructures.A general growth mechanism model of one-dimensional nanostructures on AAO template was established and further confirmed by experimental observation.展开更多
基金Project supported by the Key R&D Program of Jiangsu Province(No.BE2016085)the National Natural Science Foundation of China(Nos.61674051)the External Cooperation Program of BIC,Chinese Academy of Sciences(No.121E32KYSB20160071)
文摘Zn diffusion into InP was carried out ex-situ using a new Zn diffusion technique with zinc phosphorus particles placed around InP materials as zinc source in a semi-closed chamber formed by a modified diffusion furnace. The optical characteristics of the Zn-diffused InP layer for the planar-type InGaAs/InP PIN photodetectors grown by molecular beam epitaxy （MBE） has been investigated by photoluminescence （PL） measurements. The temperature-dependent PL spectrum of Zn-diffused InP samples at different diffusion temperatures showed that band-to-acceptor transition dominates the PL emission, which indicates that Zn was commendably diffused into InP layer as the acceptor. High quality Zn-diffused InP layer with typically smooth surface was obtained at 580 ℃for 10 min. Furthermore, more interstitial Zn atoms were activated to act as acceptors after a rapid annealing process. Based on the above Zn-diffusion technique, a 50μm planar-type InGaAs/InP PIN photodector device was fabricated and exhibited a low dark current of 7.73 pA under a reverse bias potential of -5 V and a high break- down voltage of larger than 41 V （1 〈 10μA）. In addition, a high responsivity of 0.81 A/W at 1.31/~m and 0.97 A/W at 1.55μm was obtained in the developed PIN photodetector.
基金financially supported by the Natural Science Foundation of Hebei Province(Grant No.E2019202107).
文摘Heusler alloys are a kind of intermetallic compounds with highly-ordered arrangement of atoms.Many attractive functional materials have been developed in Heusler alloys.Due to the application requirements of materials in new-generation electronic devices and spintronics devices,one-dimensional nanostructured Heusler alloys with special functions are needed.In this work,it is proposed to grow one-dimensional Heusler alloy nanostructures(1D-HA-NSs)by magnetron sputtering plus anodic aluminum oxide(AAO)template.Nanowires with different shapes,amorphous-coated(AC)nanowires and nanotubes were successfully grown for several Heusler alloys.AC nanowires are the unique products of our method.Heusler alloy nanotubes are reported for the first time.The one-dimensional nanostructures grow on the surface of the AAO substrate rather than in the holes.The top of the pore wall is the nanostructure growth point,the shape of which determines the morphology of the nanostructures.A general growth mechanism model of one-dimensional nanostructures on AAO template was established and further confirmed by experimental observation.
