In_(2/3)PSe_(3)因其对称性破缺的晶体结构、良好的发光性质和直接带隙特性,在光电子器件领域具有巨大的应用潜力.本研究采用化学气相输运法合成了In_(2/3)PSe_(3)单晶并通过机械剥离方法获得了二维In_(2/3)PSe_(3)纳米片.借助二次谐波(...In_(2/3)PSe_(3)因其对称性破缺的晶体结构、良好的发光性质和直接带隙特性,在光电子器件领域具有巨大的应用潜力.本研究采用化学气相输运法合成了In_(2/3)PSe_(3)单晶并通过机械剥离方法获得了二维In_(2/3)PSe_(3)纳米片.借助二次谐波(second-harmonic generation,SHG)和光致发光(photoluminescence,PL)光谱对其非线性光学和发光性质进行了系统的研究,结果表明In_(2/3)PSe_(3)纳米片具有本征对称性破缺的晶体结构和优异的发光性质.通过微纳加工技术构筑了基于In_(2/3)PSe_(3)纳米片的光探测器并研究了其光探测性能.基于In_(2/3)PSe_(3)纳米片的光探测器在365 nm波长的光照下,具有极低的暗电流(25 f A)、优异的探测度(6.28×10^(11)Jones)、高的开关比(4×10^(4))以及超快的响应速度(14μs/24μs).这些优异的光电性能预示着In_(2/3)PSe_(3)有潜力成为新一代高性能光探测器的核心材料.展开更多
Manganese phosphorous selenium(MnPSe_(3)),as a representative of layered metal phosphorus trichalcogenides(MPTs),has gained significant attention due to its direct bandgap,high carrier mobility,large absorption coeffi...Manganese phosphorous selenium(MnPSe_(3)),as a representative of layered metal phosphorus trichalcogenides(MPTs),has gained significant attention due to its direct bandgap,high carrier mobility,large absorption coefficient,which indicate great potential in photoelectric application.Herein,high-quality two-dimensional(2D)MnPSe_(3) flakes were mechanically exfoliated from the corresponding bulk crystals synthesized by chemical vapor transport(CVT)methods.The systematic investigation was applied to the lattice vibrations of MnPSe_(3) via angle-resolved polarized Raman spectroscopy(ARPRS),and the Raman vibration modes were determined based on Raman selection rules and crystal symmetry.Impressively,the photodetectors based on 2D MnPSe_(3) flakes exhibit excellent photoresponse to the ultraviolet light with a responsivity up to 22.7 A W^(-1) and a detectivity of 2.4×10^(11) Jones.The high performance in the ultraviolet range signifies that 2D MnPSe_(3) is expected to be a powerful candidate for future ultraviolet photodetection.展开更多
文摘In_(2/3)PSe_(3)因其对称性破缺的晶体结构、良好的发光性质和直接带隙特性,在光电子器件领域具有巨大的应用潜力.本研究采用化学气相输运法合成了In_(2/3)PSe_(3)单晶并通过机械剥离方法获得了二维In_(2/3)PSe_(3)纳米片.借助二次谐波(second-harmonic generation,SHG)和光致发光(photoluminescence,PL)光谱对其非线性光学和发光性质进行了系统的研究,结果表明In_(2/3)PSe_(3)纳米片具有本征对称性破缺的晶体结构和优异的发光性质.通过微纳加工技术构筑了基于In_(2/3)PSe_(3)纳米片的光探测器并研究了其光探测性能.基于In_(2/3)PSe_(3)纳米片的光探测器在365 nm波长的光照下,具有极低的暗电流(25 f A)、优异的探测度(6.28×10^(11)Jones)、高的开关比(4×10^(4))以及超快的响应速度(14μs/24μs).这些优异的光电性能预示着In_(2/3)PSe_(3)有潜力成为新一代高性能光探测器的核心材料.
基金supported by the National Natural Science Foundation of China(21825103)Hubei Provincial Natural Science Foundation(2019CFA002)+1 种基金the Fundamental Research Funds for the Central Universities(2019kfyXMBZ018)the support from the Analytical and Testing Center of Huazhong University of Science and Technology。
文摘Manganese phosphorous selenium(MnPSe_(3)),as a representative of layered metal phosphorus trichalcogenides(MPTs),has gained significant attention due to its direct bandgap,high carrier mobility,large absorption coefficient,which indicate great potential in photoelectric application.Herein,high-quality two-dimensional(2D)MnPSe_(3) flakes were mechanically exfoliated from the corresponding bulk crystals synthesized by chemical vapor transport(CVT)methods.The systematic investigation was applied to the lattice vibrations of MnPSe_(3) via angle-resolved polarized Raman spectroscopy(ARPRS),and the Raman vibration modes were determined based on Raman selection rules and crystal symmetry.Impressively,the photodetectors based on 2D MnPSe_(3) flakes exhibit excellent photoresponse to the ultraviolet light with a responsivity up to 22.7 A W^(-1) and a detectivity of 2.4×10^(11) Jones.The high performance in the ultraviolet range signifies that 2D MnPSe_(3) is expected to be a powerful candidate for future ultraviolet photodetection.
