Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are...Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.展开更多
Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditio...Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.展开更多
This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels du...This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.展开更多
The thermal expansion coefficients (TEC) of RuO2 crystallits in thick film resistor (TFR) composites, consisting of RuO2 dispersed in lead-silicate glass of various compositions, were evaluated from X-ray diffraction ...The thermal expansion coefficients (TEC) of RuO2 crystallits in thick film resistor (TFR) composites, consisting of RuO2 dispersed in lead-silicate glass of various compositions, were evaluated from X-ray diffraction patterns at temperatures 298;773;973 and 1123 K corresponding to characteristic temperatures of resistivity and thermopower anomalies of the TFRs. It has been found that TEC of free RuO2 powder along a-axis has an anomaly at T > 973 K (expansion is replaced by constriction), whereas constriction along c-axes remains for all temperatures. This anomaly disappears in doped glass of simplest composition (2SiO2.PbO) but occurs in glasses of some complex compositions. Symmetry of unit cell of RuO2 is not changed in the temperature range investigated.展开更多
The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing...The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.展开更多
文摘Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.
文摘Results of investigation of X-ray diffraction, infrared and optical spectra of powders of the ruthenium dioxide, lead-silicate glass as well as their mixture before and after sintering are reported. Sintering conditions typical for thick film resistors were used. Intensity of main lines of RuO2 in X-ray diffraction patterns of sintered mixtures decreases and they slightly shift towards small angles. No new reflexes appear in these patterns. Absorbance of RuO2 in the range of 2.5-100 μm is proportional to and featureless. Infrared spectrum of lead-silicate glass has absorption bands of [SiO4]4- tetrahedra and Pb-O bonds only. Optical spectrum of RuO2 has wide absorption bands at 950 and 370 nm. Spectra of the mixture of RuO2 and glass powders before and after sintering are different indicating that there is interaction between them during the sintering process. Concentration of free charge carriers estimated from the optical spectra is about 1021 cm-3.
文摘This article is the final part of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistors). In the first part [1], the formation of percolation levels due to diffusion of dopant atoms into the glass has been considered. The diffusion mechanism allowed us to explain shifting of the percolation threshold towards to lower value and the effect of firing conditions as well as the components composition on the electrical conduction of the doped glass. The coexistence of thermal activation and localization of free charge carriers as the result of nanocrystalline structure of the glass was the subject of the second part [2]. Because of it, the resistivity of the doped silicate glass is proportional to exp (–aT–ζ) at low temperatures (T 50 K), 0.4 ζ < 0.8. Structural transitions of nanocrystals take place at high temperatures (T > 800 K) and the conductivity of the doped silicate glass decreases sharply. We consider the origin of the minimum in the temperature dependence of resistivity of the doped silicate glass here. It is shown that the minimum arises from merge of impurity band into the valence band of glass at temperature high enough, so thermal activation of charge carriers as well as its hopping are failed, and scattering of free charge carriers become predominant factor in the temperature dependence of the resistivity.
文摘The thermal expansion coefficients (TEC) of RuO2 crystallits in thick film resistor (TFR) composites, consisting of RuO2 dispersed in lead-silicate glass of various compositions, were evaluated from X-ray diffraction patterns at temperatures 298;773;973 and 1123 K corresponding to characteristic temperatures of resistivity and thermopower anomalies of the TFRs. It has been found that TEC of free RuO2 powder along a-axis has an anomaly at T > 973 K (expansion is replaced by constriction), whereas constriction along c-axes remains for all temperatures. This anomaly disappears in doped glass of simplest composition (2SiO2.PbO) but occurs in glasses of some complex compositions. Symmetry of unit cell of RuO2 is not changed in the temperature range investigated.
文摘The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.
