Silicon carbide(SiC) has been widely concerned for its excellent overall mechanical and physical properties, such as low density, good thermal-shock behavior, high temperature oxidation resistance, and radiation resis...Silicon carbide(SiC) has been widely concerned for its excellent overall mechanical and physical properties, such as low density, good thermal-shock behavior, high temperature oxidation resistance, and radiation resistance; as a result, the SiC-based materials have been or are being widely used in most advanced fields involving aerospace, aviation, military, and nuclear power. Joining of SiC-based materials(monolithic SiC and SiCf/SiC composites) can resolve the problems on poor processing performance and difficulty of fabrication of large-sized and complex-shaped components to a certain extent, which are originated from their high inherent brittleness and low impact toughness.Starting from the introduction to SiC-based materials, joining of ceramics, and joint strength characterization, the joining of SiC-based materials is reviewed by classifying the as-received interlayer materials, involving no interlayer, metallic, glass-ceramic, and organic interlayers. In particular, joining processes(involving joining techniques and parameter conditions), joint strength,interfacial microstructures, and/or reaction products are highlighted for understanding interfacial behavior and for supporting development of application-oriented joining techniques.展开更多
基金supported by the National Natural Science Foundation of China (No. 51572112)the National Key R&D Program of China (No. 2017YFB0310400)+3 种基金the 333 Talents Project (No. BRA2017387)Six Talent Peaks Project (No. TD-XCL-004)Innovation/Entrepreneurship Program ([2015]26)Qing Lan Project ([2016]15) of Jiangsu Province
文摘Silicon carbide(SiC) has been widely concerned for its excellent overall mechanical and physical properties, such as low density, good thermal-shock behavior, high temperature oxidation resistance, and radiation resistance; as a result, the SiC-based materials have been or are being widely used in most advanced fields involving aerospace, aviation, military, and nuclear power. Joining of SiC-based materials(monolithic SiC and SiCf/SiC composites) can resolve the problems on poor processing performance and difficulty of fabrication of large-sized and complex-shaped components to a certain extent, which are originated from their high inherent brittleness and low impact toughness.Starting from the introduction to SiC-based materials, joining of ceramics, and joint strength characterization, the joining of SiC-based materials is reviewed by classifying the as-received interlayer materials, involving no interlayer, metallic, glass-ceramic, and organic interlayers. In particular, joining processes(involving joining techniques and parameter conditions), joint strength,interfacial microstructures, and/or reaction products are highlighted for understanding interfacial behavior and for supporting development of application-oriented joining techniques.