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STUDY ON CARBOXYL-CONTAINING STARCH IN HEAVY METAL REMOVAL 被引量:1
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作者 Hu, ZA Zhou, XX +2 位作者 Zhang, L guo, yh Wu, HY 《Chinese Chemical Letters》 SCIE CAS CSCD 1995年第7期605-608,共4页
Water-insoluble carboxyl-containing starch graft polymers were prepared. Residual metal ion concentrations in solutions treated with the insoluble starch graft polymers were measured in different pH. The mechanism of ... Water-insoluble carboxyl-containing starch graft polymers were prepared. Residual metal ion concentrations in solutions treated with the insoluble starch graft polymers were measured in different pH. The mechanism of removing heavy metals from aqueous solutions with the carboxylated starchs was described. 展开更多
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More Feasible Way to Cleave Photo-Labile Resin
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作者 Wang, DX guo, yh Huang, L 《Chinese Chemical Letters》 SCIE CAS CSCD 1996年第10期909-910,共2页
A combinatorial cleavage, acidolysis-saponification, after solid phase peptide synthesis on photo-labile resin was stated in present paper. Peptide (Gly-Asp-Ala-Lys-Gly)(2)>Lys-OH was liberated with high yield(92.1... A combinatorial cleavage, acidolysis-saponification, after solid phase peptide synthesis on photo-labile resin was stated in present paper. Peptide (Gly-Asp-Ala-Lys-Gly)(2)>Lys-OH was liberated with high yield(92.1%) and excellent purity(91.6%) from its protected peptidyl nitro-resin precursor by a new orthorgonal protocol: 1) Hi-TFMSA, 2) 0.2N NaOH/90% EtOH. 展开更多
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Neutron-irradiated Si by positron annihilation
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作者 Huang, MR Wang, YY +3 位作者 Yang, JH He, YS guo, yh Liu, CC 《Chinese Science Bulletin》 SCIE EI CAS 1997年第1期26-30,共5页
SILICON is a quite important material in the application of energy resources technology. With the development of ion-implantation technique and the increasing interest in dopping, it is very important to know the rela... SILICON is a quite important material in the application of energy resources technology. With the development of ion-implantation technique and the increasing interest in dopping, it is very important to know the relationship between the vacacies induced by the particle irradiation damage and the annealing temperature. The positron annihilation is a very useful method for studying defects in the semiconductor, because the annihilation characteristics of trapped positron are influenced by the charge of the defects. It has been shown that the positrons can be trapped by defects created by irradi- 展开更多
关键词 neutron-irradiated SI POSITRON ANNIHILATION vacancy.
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