Charge density wave states in phase-engineered monolayer VTe_(2)

Charge density wave(CDW)strongly affects the electronic properties of two-dimensional(2D)materials and can be tuned by phase engineering.Among 2D transitional metal dichalcogenides(TMDs),VTe_(2)was predicted to require small energy for its phase transition and shows unexpected CDW states in its T-phase.However,the CDW state of H-VTe_(2)has been barely reported.Here,we investigate the CDW states in monolayer(ML)H-VTe_(2),induced by phase-engineering from T-phase VTe_(2).The phase transition between T-and H-VTe_(2)is revealed with x-ray photoelectron spectroscopy(XPS)and scanning transmission electron microscopy(STEM)measurements.For H-VTe_(2),scanning tunneling microscope(STM)and low-energy electron diffraction(LEED)results show a robust 2√3×2√3CDW superlattice with a transition temperature above 450 K.Our findings provide a promising way for manipulating the CDWs in 2D materials and show great potential in its application of nanoelectronics.

Epitaxial synthesis and electronic properties of monolayer Pd2Se3

Two-dimensional(2D)materials received large amount of studies because of the enormous potential in basic science and industrial applications.Monolayer Pd2Se3 is a fascinating 2D material that was predicted to possess excellent thermoelectric,electronic,transport,and optical properties.However,the fabrication of large-scale and high-quality monolayer Pd2Se3 is still challenging.Here,we report the synthesis of large-scale and high-quality monolayer Pd2Se3 on graphene-SiC(0001)by a two-step epitaxial growth.The atomic structure of Pd2Se3 was investigated by scanning tunneling microscope(STM)and confirmed by non-contact atomic force microscope(nc-AFM).Two subgroups of Se atoms have been identified by nc-AFM image in agreement with the theoretically predicted atomic structure.Scanning tunneling spectroscopy(STS)reveals a bandgap of 1.2 eV,suggesting that monolayer Pd2Se3 can be a candidate for photoelectronic applications.The atomic structure and defect levels of a single Se vacancy were also investigated.The spatial distribution of STS near the Se vacancy reveals a highly anisotropic electronic behavior.The two-step epitaxial synthesis and characterization of Pd2Se3 provide a promising platform for future investigations and applications.