In this letter,the Ti-doped NbO_(x)-based selector is applied to SiNOx-based resistive random-access memory(RRAM),forming Pt/NbOx(Ti-doped)/SiNO_(x)/Ti one selector-one RRAM device(1S1R),to suppress the sneak path cur...In this letter,the Ti-doped NbO_(x)-based selector is applied to SiNOx-based resistive random-access memory(RRAM),forming Pt/NbOx(Ti-doped)/SiNO_(x)/Ti one selector-one RRAM device(1S1R),to suppress the sneak path current.The fabricated 1S1R exhibits stable direct current(DC)endurance(>200 cycles),suitable memory window(>40),matched selectivity(>40)and high uniformity of switching parameters.展开更多
基金financially supported by the National Natural Science Foundation of China(No.61904050)the Science and Technology Major Project of Hubei(Nos.2020AAA005 and 2020AEA017)+1 种基金the Scientific Research Project of Education Department of Hubei Province(No.Q20181009)Hubei Key Laboratory of Advanced Memories。
文摘In this letter,the Ti-doped NbO_(x)-based selector is applied to SiNOx-based resistive random-access memory(RRAM),forming Pt/NbOx(Ti-doped)/SiNO_(x)/Ti one selector-one RRAM device(1S1R),to suppress the sneak path current.The fabricated 1S1R exhibits stable direct current(DC)endurance(>200 cycles),suitable memory window(>40),matched selectivity(>40)and high uniformity of switching parameters.
