A family of new triphenylmethane(TPM)-based polyimides(PIs)containing bulky tert-butyldimethylsiloxy(TBS)side-groups(PI-TPMOSis)has been prepared by a post-polymerization modification via a simple silyl ether reaction...A family of new triphenylmethane(TPM)-based polyimides(PIs)containing bulky tert-butyldimethylsiloxy(TBS)side-groups(PI-TPMOSis)has been prepared by a post-polymerization modification via a simple silyl ether reaction of TPM-based PIs containing hydroxyl(OH)groups(PI-TPMOHs).The attachment of TBS side-groups in PI-TPMOSis can be achieved up to 100%,as confirmed by the 1H-NMR and IR spectra.Due to the presence of the TPM structure,PI-TPMOSi films still display the excellent thermal stability with high glass transition temperature(Tg)of 314–351°C and high degradation temperature(Td5%)of 480–501°C.It is quite remarkable that the introduction of TBS side-groups into PI-TPMOSi chains results in more superior optical,dielectric and solubility properties in comparison with the precursor PI-TPMOH films,probably due to the reductions of the packing density and charge-transfer complexes(CTCs)formation.The optical transmittance at 400 nm(T400)of PI-TPMOSi films is significantly increased from 45.3%–68.8%to 75.4%–81.6%of the precursor PI-TPMOH films.The dielectric constant(Dk)and dissipation factor(Df)at 1 MHz of PI-TPMOSi films are reduced from 4.11–4.40 and 0.00159–0.00235 to 2.61–2.92 and 0.00125–0.00171 of the precursor PI-TPMOH films,respectively.Combining the molecular design and simple preparation method,this study provides an effective approach for enhancement of various properties of PI films for microelectronic and photoelectric engineering applications.展开更多
基金supported by the National Natural Science Foundation of China(Nos.52203014,52103010 and 52003200)the Guangdong Basic and Applied Basic Research Foundation(Nos.2020A1515110767,2022A1515010969,2020A1515110897 and 2023A1515010999)+2 种基金the Open Fund for Key Lab of Guangdong High Property and Functional Macromolecular Materials,China(No.20220601)Guangdong Provincial Department of Education Featured Innovation Project(No.2021KTSCX138)the Science Foundation for Young Research Groups of Wuyi University(Nos.2020AL016 and 2019AL019).
文摘A family of new triphenylmethane(TPM)-based polyimides(PIs)containing bulky tert-butyldimethylsiloxy(TBS)side-groups(PI-TPMOSis)has been prepared by a post-polymerization modification via a simple silyl ether reaction of TPM-based PIs containing hydroxyl(OH)groups(PI-TPMOHs).The attachment of TBS side-groups in PI-TPMOSis can be achieved up to 100%,as confirmed by the 1H-NMR and IR spectra.Due to the presence of the TPM structure,PI-TPMOSi films still display the excellent thermal stability with high glass transition temperature(Tg)of 314–351°C and high degradation temperature(Td5%)of 480–501°C.It is quite remarkable that the introduction of TBS side-groups into PI-TPMOSi chains results in more superior optical,dielectric and solubility properties in comparison with the precursor PI-TPMOH films,probably due to the reductions of the packing density and charge-transfer complexes(CTCs)formation.The optical transmittance at 400 nm(T400)of PI-TPMOSi films is significantly increased from 45.3%–68.8%to 75.4%–81.6%of the precursor PI-TPMOH films.The dielectric constant(Dk)and dissipation factor(Df)at 1 MHz of PI-TPMOSi films are reduced from 4.11–4.40 and 0.00159–0.00235 to 2.61–2.92 and 0.00125–0.00171 of the precursor PI-TPMOH films,respectively.Combining the molecular design and simple preparation method,this study provides an effective approach for enhancement of various properties of PI films for microelectronic and photoelectric engineering applications.
