Edge-and strain-induced band bending in bilayer-monolayer Pb_(2)Se_(3) heterostructures

By using scanning tunneling microscope/microscopy(STM/STS), we reveal the detailed electronic structures around the sharp edges and strained terraces of lateral monolayer-bilayer Pd_(2)Se_(3) heterostructures. We find that the edges of such heterostructures are well-defined zigzag type. Band bending and alignment are observed across the zigzag edge, forming a monolayer-bilayer heterojunction. In addition, an n-type band bending is induced by strain on a confined bilayer Pd_(2)Se_(3) terrace. These results provide effective toolsets to tune the band structures in Pd_(2)Se_(3)-based heterostructures and devices.

Spin-flop transition and Zeeman effect of defect-localized bound states in the antiferromagnetic topological insulator MnBi_(2)Te_(4)

The correlation of surface impurity states with the antiferromagnetic ground states is crucial for understanding the formation of the topological surface state in the antiferromagnetic topological insulators MnBi_(2)Te_(4).By using low-temperature scanning tunneling microscopy and spectroscopy,we observed a localized bound state around the Mn-Bi antisite defect at the Teterminated surface of the antiferromagnetic topological insulator MnBi_(2)Te_(4).When applying a magnetic field perpendicular to the surface(Bz)from–1.5 to 3.0 T,the bound state shifts linearly to a lower energy with increasing Bz,which is attributed to the Zeeman effect.Remarkably,when applying a large range of Bz from–8.0 to 8.0 T,the magnetic field induced reorientation of surface magnetic moments results in an abrupt jump in the local density of states(LDOS),which is characterized by LDOSchange-ratio■quantitatively.Interestingly,two asymmetric critical field,–2.0 and 4.0 T determined by the two peaks in■are observed,which is consistent with simulated results according to a Mills-model,describing a surface spin flop transition(SSF).Our results provide a new flatform for studying the interplay between magnetic order and topological phases in magnetic topological materials.

Titanium doped kagome superconductor CsV_(3-x)Ti_(x)Sb_(5)and two distinct phases

The vanadium-based kagome superconductor CsV_(3)Sb_(5) has attracted tremendous attention due to its unexcepted anomalous Hall effect(AHE),charge density waves(CDWs),nematicity,and a pseudogap pair density wave(PDW)coexisting with unconventional strong-coupling superconductivity.The origins of CDWs,unconventional superconductivity,and their correlation with different electronic states in this kagome system are of great significance,but so far,are still under debate.Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics,but remains unexplored.Here,we report,for the first time,the synthesis of Ti-substituted CsV_(3)Sb_(5) single crystals and its rich phase diagram mapping the evolution of intertwining electronic states.The Ti atoms directly substitute for V in the kagome layers.CsV_(3-x)Ti_(x)Sb_(5) shows two distinct superconductivity phases upon substitution.The Ti slightly-substituted phase displays an unconventional V-shaped superconductivity gap,coexisting with weakening CDW,PDW,AHE,and nematicity.The Ti highly-substituted phase has a U-shaped superconductivity gap concomitant with a short-range rotation symmetry breaking CDW,while long-range CDW,twofold symmetry of in-plane resistivity,AHE,and PDW are absent.Furthermore,we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb,showing a different modulation on the superconductivity phases and CDWs.These findings open up a way to synthesise a new family of doped CsV_(3)Sb_(5) materials,and further represent a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.