Organic/inorganic hybrid van der Waals heterostructure with an atomically abrupt interface has attracted great research interests within the field of multifunctional electronic and optoelectronic devices.The integrati...Organic/inorganic hybrid van der Waals heterostructure with an atomically abrupt interface has attracted great research interests within the field of multifunctional electronic and optoelectronic devices.The integration of organic rubrene films with inorganic Si semiconductors can avoid the atomic mutual-diffusion at the interface,and provide the possibility of forming two-dimensional van der Waals heterojunction accompanied with the type-II energy band alignment,due to the transfer behaviors of majority carriers at the interface.In this study,the high-quality rubrene/Si van der Waals heterostructure with an electronically abrupt junction was prepared,and a self-powered photodetector was then constructed based on this hybrid heterojunction.The photodetector demonstrated an excellent switching response to the 1064 nm monochromatic light with large on/off current ratio of 7.0×10^(3),the maximum photocurrent of 14.62 m A,the maximum responsivity of 2.07 A/W,the maximum detectivity of 2.9×10^(11)Jones,and a fast response time of 13.0μs.This study offers important guidance for preparing high-quality rubrene/Si hybrid van der Waals heterostructure with desirable band alignment,and the designed heterojunction photodetector has an important application prospect in the field of multifunctional optoelectronics.展开更多
基金the National Natural Science Foundation of China(Grant Nos.11604228,11774208,and 11974222)the Science and Technology Planning Foundation of Shandong Province,China(Grant No.J18KA219)。
文摘Organic/inorganic hybrid van der Waals heterostructure with an atomically abrupt interface has attracted great research interests within the field of multifunctional electronic and optoelectronic devices.The integration of organic rubrene films with inorganic Si semiconductors can avoid the atomic mutual-diffusion at the interface,and provide the possibility of forming two-dimensional van der Waals heterojunction accompanied with the type-II energy band alignment,due to the transfer behaviors of majority carriers at the interface.In this study,the high-quality rubrene/Si van der Waals heterostructure with an electronically abrupt junction was prepared,and a self-powered photodetector was then constructed based on this hybrid heterojunction.The photodetector demonstrated an excellent switching response to the 1064 nm monochromatic light with large on/off current ratio of 7.0×10^(3),the maximum photocurrent of 14.62 m A,the maximum responsivity of 2.07 A/W,the maximum detectivity of 2.9×10^(11)Jones,and a fast response time of 13.0μs.This study offers important guidance for preparing high-quality rubrene/Si hybrid van der Waals heterostructure with desirable band alignment,and the designed heterojunction photodetector has an important application prospect in the field of multifunctional optoelectronics.
