Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security surveillance.While traditional systems rely...Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security surveillance.While traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum range.In this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented.The bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition.The WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical properties.The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating effect.Finally,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated.The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.展开更多
基金supported in part by the National Research Foundation of Korea(2022M3D1A2083618,2021M3H4A1A02056037,2022H1D3A2A01096362,RS-2023-00237585,RS-2023-00237308)supported in part by Ontario's Ministry of Research,Innovation,and Science through Early Researcher Awards(ER17-13-205)+1 种基金also in part by NSERC Discovery Grant(RGPIN-2020-04070)M.S.is supported in part by the NSERC Canada Graduate Scholarship-Master's(CGS-M)program and the WIN Nanofellowship.
文摘Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security surveillance.While traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum range.In this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented.The bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition.The WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical properties.The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating effect.Finally,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated.The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.
