Hydrogen Gas Sensor Based on Nanocrystalline SnO_2 Thin Film Grown on Bare Si Substrates

In this paper, high-quality nanocrystalline SnO_2 thin film was grown on bare Si(100) substrates by a sol–gel method. A metal–semiconductor–metal gas sensor was fabricated using nanocrystalline SnO_2 thin film and palladium(Pd)metal. The contact between Pd and nanocrystalline SnO_2 film is tunable. Ohmic barrier contact was formed without addition of glycerin, while Schottky contact formed by adding glycerin. Two kinds of sensor devices with Schottky contact were fabricated(Device 1: 8 h, 500 °C; Device 2: 10 h, 400 °C). The room temperature sensitivity for hydrogen(H_2) was120 and 95 % in 1000 ppm H_2, and the low power consumption was 65 and 86 l W for two devices, respectively. At higher temperature of 125 °C, the sensitivity was increased to 195 and 160 %, respectively. The sensing measurements were repeatable at various temperatures(room temperature, 75, 125 °C) for over 50 min. It was found that Device 1 has better sensitivity than Device 2 due to its better crystallinity. These findings indicate that the sensors fabricated on bare Si by adding glycerin to the sol solution have strong ability to detect H_2 gas under different concentrations and temperatures.

Plasma-assisted MBE of GaN pn-junction Grown on Si（111） Substrate

We investigated growth of GaN pn-junction layers grown on silicon（111） by plasma-assisted molecular beam epitaxy system and its application for photo-devices. Si and Mg were used as n- and p-dopants, respectively. The reflection high energy electron diffraction images indicated a good surface morphology of GaN pn-junction layer. The thickness of GaN pn- junctions layers was about 0.705 nm. The absence of cubic phase GaN showed that thiS layer possessed hexagonal structure. According to XRD symmetric rocking curve ω/2θ scans of （0002） plane at room temperature, the full width at half-maximun of GaN pn-junction sample was calculated as 0.34°, indicating a high quality layer of GaN pn-junction. Surprisingly, there was no quenching of the A1 （LO） peak, with the presence of Si- and Mg-dopants in sample. The pn-junctions sample has a good optical quality which was measured by the photoluminescence system. For photo-devices applications, Ni and A1 were used as front and back contacts, respectively. The current-voltage characteristics of the devices showed the typical rectifying behavior of heterojunction. The photo-current measurement was performed using a visible-lamp under forward and reverse biases. From the temperature-dependent measurements, the current at low bias exhibited much stronger temperature dependence and weaker field dependence. The effect of thermal annealing on front contact Ni was also carried out. The front contact Ni was annealed at 400 and 600 ℃ for 10 min in the nitrogen ambient. The results showed that 600 ℃ treated sample had a higher gain at 1.00 V/e than 400 ℃ treated and untreated samples.

InGaN/GaN laser diode characterization and quantum well number effect

The effect of quantum well number on the quantum efficiency and temperature characteristics of In- GaN/GaN laser diodes （LDs） is determined and investigated. The 3-nm-thick In0.13Ca0.87N wells and two 6-am-thick GaN barriers are selected as an active region for Fabry-Perot （FP） cavity waveguide edge emitting LD. The internal quantum efficiency and internal optical loss coefficient are extracted through the simulation software for single, double, and triple InGaN/GaN quantum wells. The effects of device temperature on the laser threshold current, external differential quantum efficiency （DQE）, and output wavelength are also investigated. The external quantum efficiency and characteristic temperature are improved significantly when the quantum well number is two. It is indicated that the laser structures with many quantum wells will suffer from the inhomogeneity of the carrier density within the quantum well itself which affects the LD performance.

A study of the operating parameters and barrier thickness of Al_(0.08)In_(0.08)Ga_(0.84)N/Al_xIn_yGa_(1-x-y)N double quantum well laser diodes

The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.