The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(～ 4.9 eV) and large breakdown e...The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(～ 4.9 eV) and large breakdown electric field of about8 MV/cm. Low cost and high quality of large β-Ga_2O_3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga_2O_3 crystals in bulk form. We then describe the various methods for producing bulk β-Ga_2O_3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.展开更多
基金funded by the following grants:Chinese Academy of Sciences president’s International Fellowship Initiative(Grant No.2018PE0033)National Natural Science Foundation of China(Grant No.51802327)+1 种基金Science and Technology Commission of Shanghai Municipality(No.18511110500)Pre-research Fund Key Project(No.6140922010601)
文摘The rapid development of bulk β-Ga_2O_3 crystals has attracted much attention to their use as ultra-wide bandgap materials for next-generation power devices owing to its large bandgap(～ 4.9 eV) and large breakdown electric field of about8 MV/cm. Low cost and high quality of large β-Ga_2O_3 single-crystal substrates can be attained by melting growth techniques widely used in the industry. In this paper, we first present an overview of the properties of β-Ga_2O_3 crystals in bulk form. We then describe the various methods for producing bulk β-Ga_2O_3 crystals and their applications. Finally, we will present a future perspective of the research in the area in the area of single crystal growth.
