We demonstrate 5dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide.The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ult...We demonstrate 5dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide.The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ultralow losses and mature,reliable,and low-cost fabrication methods of silicon nitride waveguide technology.We show that the waveguide platform demonstrates low background propagation losses of 0.25dB/cm based on a ring resonator device with a Q factor of 1.3×10^6 at 1640 nm.We measure 5dB peak net gain at 1558 nm and>3dB of net gain across the C band in a 6.7 cm long waveguide for 35 m W of launched 1470 nm pump power.Gain per unit length of 1.7 and 1.4dB/cm is measured in a 2.2 cm long waveguide for 970 and 1470 nm pump wavelengths,respectively.Amplifier simulations predict that>10dB gain can be achieved across the C band simply by optimizing waveguide length and fiber-chip coupling.These results demonstrate a promising approach for the monolithic integration of compact erbium-doped waveguide amplifiers on silicon nitride chips and within silicon-based photonic integrated circuits.展开更多
Silicon photonics is coming of age;however,it is still lacking a monolithic platform for optical sources and nonlinear functionalities prompting heterogeneous integration of different materials tailored to different a...Silicon photonics is coming of age;however,it is still lacking a monolithic platform for optical sources and nonlinear functionalities prompting heterogeneous integration of different materials tailored to different applications.Here we demonstrate tellurium oxide as a complementary metal oxide semiconductor silicon photonics platform for nonlinear functionalities,which is already becoming an established platform for sources and amplifiers.We show broadband supercontinuum generation covering the entire telecom window and show for the first time to our knowledge third-harmonic generation in its integrated embodiment.Together with the nowavailable lasers and amplifiers on integrated Te O_(2) this work paves the way for a monolithic TeO_(2)-based nonlinear silicon photonics platform.展开更多
This erratum corrects typos that appeared in Photon.Res.8,127(2020)in the text,a figure showing the experimental setup,and a table listing the absorption and emission cross section values used in simulations.
基金Natural Sciences and Engineering Research Council of Canada(RGPIN-2017-06423,STPGP494306)Canada Foundation for Innovation(35548)。
文摘We demonstrate 5dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide.The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ultralow losses and mature,reliable,and low-cost fabrication methods of silicon nitride waveguide technology.We show that the waveguide platform demonstrates low background propagation losses of 0.25dB/cm based on a ring resonator device with a Q factor of 1.3×10^6 at 1640 nm.We measure 5dB peak net gain at 1558 nm and>3dB of net gain across the C band in a 6.7 cm long waveguide for 35 m W of launched 1470 nm pump power.Gain per unit length of 1.7 and 1.4dB/cm is measured in a 2.2 cm long waveguide for 970 and 1470 nm pump wavelengths,respectively.Amplifier simulations predict that>10dB gain can be achieved across the C band simply by optimizing waveguide length and fiber-chip coupling.These results demonstrate a promising approach for the monolithic integration of compact erbium-doped waveguide amplifiers on silicon nitride chips and within silicon-based photonic integrated circuits.
基金Defense Advanced Research Projects Agency(HR0011-15-C-0056)Natural Sciences and Engineering Research Council of Canada(RGPIN-2017-06423,STPGP 494306)Deutsche Forschungsgemeinschaft(SP2111).
文摘Silicon photonics is coming of age;however,it is still lacking a monolithic platform for optical sources and nonlinear functionalities prompting heterogeneous integration of different materials tailored to different applications.Here we demonstrate tellurium oxide as a complementary metal oxide semiconductor silicon photonics platform for nonlinear functionalities,which is already becoming an established platform for sources and amplifiers.We show broadband supercontinuum generation covering the entire telecom window and show for the first time to our knowledge third-harmonic generation in its integrated embodiment.Together with the nowavailable lasers and amplifiers on integrated Te O_(2) this work paves the way for a monolithic TeO_(2)-based nonlinear silicon photonics platform.
文摘This erratum corrects typos that appeared in Photon.Res.8,127(2020)in the text,a figure showing the experimental setup,and a table listing the absorption and emission cross section values used in simulations.
