By in situ x-ray diffraction,an isostructural phase transition between two kinds of the cubic PbCrO_(3) perovskites at around 1.6 GPa and room temperature with a 9.8%volume change is discovered.Recently,we have synthe...By in situ x-ray diffraction,an isostructural phase transition between two kinds of the cubic PbCrO_(3) perovskites at around 1.6 GPa and room temperature with a 9.8%volume change is discovered.Recently,we have synthesized this cubic PbCrO_(3)perovskite successfully.Here we report our high-pressure in situ electrical resistance measurements up to 4.1 GPa for this perovskite sample.At room temperature,the resistance shows special changes at 1.2 and 2.7 GPa.They may indicate the starting and ending points of this transformation.At 4.1 GPa,the negative temperature resistance coefficient is observed,which means that phase Ⅱ could be considered as a semiconductor according to our present measurement.展开更多
We experimentally investigated some of the mechanical properties of ReB2 under high temperature/pressure(TIP)conditions.High-T experiments(up to 600℃at 1 atm)were carried out in a high-T oven attached to a convention...We experimentally investigated some of the mechanical properties of ReB2 under high temperature/pressure(TIP)conditions.High-T experiments(up to 600℃at 1 atm)were carried out in a high-T oven attached to a conventional x-ray diffractometer whereas high-P experiments(up to about 42 GPa at 25℃)were conducted in a diamond-anvil cell using synchrotron x-ray radiation.High-T data suggest a highly isotropic thermal expansivity whereas high-P data suggest a highly anisotropic compressibility for ReB2.展开更多
Undercooled melt of Ge_(73.7)Ni_(26.3) alloy sample floated on B_(2)O_(3 ) melt was subjected to sputtering-deposition of Ni clusters on cooling to induce solidification.The initial temperature of solidification was 9...Undercooled melt of Ge_(73.7)Ni_(26.3) alloy sample floated on B_(2)O_(3 ) melt was subjected to sputtering-deposition of Ni clusters on cooling to induce solidification.The initial temperature of solidification was 975 K.Its undercoolingΔT was 134 K with respect to the melting temperature of the primary phase Ge.On the cooling curve existed dual recalescences representing the transformation of the primary phase(Ge)and the eutectics(Ge+GeNi)respectively.But for the sample unsputtered,only a single exothermic peak presented on the cooling curve with the initial solidification temperature of 904K and undercooling of 205K.Careful observation of the microstructure proved that the Ge phase primarily formed in the sputtering experiment was now formed together with the formation of the eutectics in the experiment without sputtering.展开更多
The in situ four-point probe resistivity measurement was used as a main method to study the solid/liquid interfacial characteristics in Ag/Sn/Ag trilayers at temperatures ranging from 150 to 305℃.It is found from the...The in situ four-point probe resistivity measurement was used as a main method to study the solid/liquid interfacial characteristics in Ag/Sn/Ag trilayers at temperatures ranging from 150 to 305℃.It is found from the variation of resistivity that three processes take place on annealing:the dissolution of silver atoms,the diffusion of silver atoms,and the formation of Ag3Sn in liquid tin layer.The first one plays the leading role in the variation of resistivity during annealing process.The apparent diffusivity of silver in liquid tin at 305℃ is determined to be 7.3×10^(-17)cm^(2)/s.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2011CB808200the National Natural Science Foundation of China under Grant No 11027405+1 种基金the National Natural Science Foundation of China under Grant Nos 10976018 and 11179030the Foundation of LSD under Grant No 9140C670203110C6705.
文摘By in situ x-ray diffraction,an isostructural phase transition between two kinds of the cubic PbCrO_(3) perovskites at around 1.6 GPa and room temperature with a 9.8%volume change is discovered.Recently,we have synthesized this cubic PbCrO_(3)perovskite successfully.Here we report our high-pressure in situ electrical resistance measurements up to 4.1 GPa for this perovskite sample.At room temperature,the resistance shows special changes at 1.2 and 2.7 GPa.They may indicate the starting and ending points of this transformation.At 4.1 GPa,the negative temperature resistance coefficient is observed,which means that phase Ⅱ could be considered as a semiconductor according to our present measurement.
基金Supported by the National Natural Science Foundation of China under Grant No 40872033the Fundamental Research Funds for the Central Universities.
文摘We experimentally investigated some of the mechanical properties of ReB2 under high temperature/pressure(TIP)conditions.High-T experiments(up to 600℃at 1 atm)were carried out in a high-T oven attached to a conventional x-ray diffractometer whereas high-P experiments(up to about 42 GPa at 25℃)were conducted in a diamond-anvil cell using synchrotron x-ray radiation.High-T data suggest a highly isotropic thermal expansivity whereas high-P data suggest a highly anisotropic compressibility for ReB2.
文摘Undercooled melt of Ge_(73.7)Ni_(26.3) alloy sample floated on B_(2)O_(3 ) melt was subjected to sputtering-deposition of Ni clusters on cooling to induce solidification.The initial temperature of solidification was 975 K.Its undercoolingΔT was 134 K with respect to the melting temperature of the primary phase Ge.On the cooling curve existed dual recalescences representing the transformation of the primary phase(Ge)and the eutectics(Ge+GeNi)respectively.But for the sample unsputtered,only a single exothermic peak presented on the cooling curve with the initial solidification temperature of 904K and undercooling of 205K.Careful observation of the microstructure proved that the Ge phase primarily formed in the sputtering experiment was now formed together with the formation of the eutectics in the experiment without sputtering.
文摘The in situ four-point probe resistivity measurement was used as a main method to study the solid/liquid interfacial characteristics in Ag/Sn/Ag trilayers at temperatures ranging from 150 to 305℃.It is found from the variation of resistivity that three processes take place on annealing:the dissolution of silver atoms,the diffusion of silver atoms,and the formation of Ag3Sn in liquid tin layer.The first one plays the leading role in the variation of resistivity during annealing process.The apparent diffusivity of silver in liquid tin at 305℃ is determined to be 7.3×10^(-17)cm^(2)/s.