In this report, an introduction to the structure of Shanghai EBIT, a brief description of the status ofShanghai EBIT project, and a short discussion of the first results of Shanghai EBIT are presented.
We have set up an experimental system consisting of an im gun and a Rutherford backscattering spectro-metry(RBS)analysis chamber.Using this system,in situ 2MeV*He+RBS analysis of films is carried out by combination wi...We have set up an experimental system consisting of an im gun and a Rutherford backscattering spectro-metry(RBS)analysis chamber.Using this system,in situ 2MeV*He+RBS analysis of films is carried out by combination with sputter etching cf low energy Ar+ions.As an example of the sputtering/RBS method,the analysis of three samples,i.e.,Si/(GexSi_(1-x)/Si)/Si(100),WSi_(x)/SiO_(2)/Si and CoSi_(x)/Si,is presented in this paper.After an appropriate fraction of the thick layer is removed by sputtering,the back edge of the Ge peak is separated from Si RBS spectmm on the interface and the O peak of the buried S1O2 layer can be identified.The change cf the doped Ti and W concentrations related to Co on the top surface is observed.The advantages of this analytical method and its possible applications in film are discussed.展开更多
文摘In this report, an introduction to the structure of Shanghai EBIT, a brief description of the status ofShanghai EBIT project, and a short discussion of the first results of Shanghai EBIT are presented.
基金Supported by the National Natural Science Foundation of China under Grant No.19874068the National High Performance Computing Fund.
文摘We have set up an experimental system consisting of an im gun and a Rutherford backscattering spectro-metry(RBS)analysis chamber.Using this system,in situ 2MeV*He+RBS analysis of films is carried out by combination with sputter etching cf low energy Ar+ions.As an example of the sputtering/RBS method,the analysis of three samples,i.e.,Si/(GexSi_(1-x)/Si)/Si(100),WSi_(x)/SiO_(2)/Si and CoSi_(x)/Si,is presented in this paper.After an appropriate fraction of the thick layer is removed by sputtering,the back edge of the Ge peak is separated from Si RBS spectmm on the interface and the O peak of the buried S1O2 layer can be identified.The change cf the doped Ti and W concentrations related to Co on the top surface is observed.The advantages of this analytical method and its possible applications in film are discussed.
