Super Boost变换器拓扑凭借输入/输出电流连续、高功率密度和高效率等优点,在航天器电源领域得到了广泛应用。在采用耦合电感并加入输入纹波抵消支路(RCN)后,可进一步减小电感体积,并实现输入电流零纹波,但现有文献尚未给出详细的论述...Super Boost变换器拓扑凭借输入/输出电流连续、高功率密度和高效率等优点,在航天器电源领域得到了广泛应用。在采用耦合电感并加入输入纹波抵消支路(RCN)后,可进一步减小电感体积,并实现输入电流零纹波,但现有文献尚未给出详细的论述和设计指导。此处分析了电感耦合系数的影响,并给出了RCN阻尼网络及隔直电容设计参考。搭建了一台1200 W的基于纹波抵消及耦合电感的Super Boost变换器实验样机,验证了参数设计的准确性及变换器可实现输入电流零纹波、高功率密度和高效率的特点。展开更多
We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors(PMOSFETs)with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process.In the process,SiO_(2)/poly-Si is adopted as the dummy ...We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors(PMOSFETs)with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process.In the process,SiO_(2)/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation.Because of the high-k/metal-gate stack formation after the 1000℃source/drain ion-implant doping activation,the fabricated PMOSFET has good electrical characteristics.The device's saturation driving current is 2.71×10^(-4) A/μm(VGS=VDS=-1.5 V)and the off-state current is 2.78×10^(-9) A/μm.The subthreshold slope of 105 mV/dec(VDS=-1.5 V),drain induced barrier lowering of 80 mV/V and Vth of -0.3 V are obtained.The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.展开更多
基金Supported by the Beijing Natural Science Foundation under Grant No 4123106the Important National Science&Technology Specific Projects of China under Grant No 2009ZX02035.
文摘We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors(PMOSFETs)with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process.In the process,SiO_(2)/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAlN gate stack after source/drain formation.Because of the high-k/metal-gate stack formation after the 1000℃source/drain ion-implant doping activation,the fabricated PMOSFET has good electrical characteristics.The device's saturation driving current is 2.71×10^(-4) A/μm(VGS=VDS=-1.5 V)and the off-state current is 2.78×10^(-9) A/μm.The subthreshold slope of 105 mV/dec(VDS=-1.5 V),drain induced barrier lowering of 80 mV/V and Vth of -0.3 V are obtained.The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.
