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Spectroscopic investigation of defects mediated oxidization of single-layer MoS_(2) 被引量:1
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作者 he zuyun GUO Zheng +4 位作者 ZHONG Xiao CheN XiaoFei XUE JianMing WANG XinWei CheN Yan 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2021年第3期611-619,共9页
Due to the extremely large surface to bulk ratio,the properties of single layer(SL)MoS_(2)are largely determined by its interaction with environment.One critical interaction process that has been intensively investiga... Due to the extremely large surface to bulk ratio,the properties of single layer(SL)MoS_(2)are largely determined by its interaction with environment.One critical interaction process that has been intensively investigated is the oxidation process of MoS_(2).Despite numerous previous explorations,the detailed mechanism regarding how MoS_(2)reacts with oxygen is still not well understood.In this work,we systematically investigate the impact of intrinsic and pre-created defects on the oxidation process of SL MoS_(2).For pristine SL MoS_(2),the oxidation is found to initiate near point defects and grain boundaries,leading to the formation of triangle pits in the basal plane and cracks near the grain boundaries.The pre-created defects introduced by ion irradiation are found to serve as the oxidation center,resulting in a more uniform oxidation process.The oxidation is found to introduce p-type doping in the SL MoS_(2),leading to the blue shift of Raman and photoluminescence(PL)spectra.The shift is found to be more for the region near the grain boundary and for the samples with more pre-created defects.Our results suggest that the presence of defects can strongly promote the oxidation reaction of SL MoS_(2)in ambient condition,which significantly affects the stability and functionality of materials. 展开更多
关键词 single layer MoS_(2) OXIDATION DEFECT
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