Recently,speech enhancement methods based on Generative Adversarial Networks have achieved good performance in time-domain noisy signals.However,the training of Generative Adversarial Networks has such problems as con...Recently,speech enhancement methods based on Generative Adversarial Networks have achieved good performance in time-domain noisy signals.However,the training of Generative Adversarial Networks has such problems as convergence difficulty,model collapse,etc.In this work,an end-to-end speech enhancement model based on Wasserstein Generative Adversarial Networks is proposed,and some improvements have been made in order to get faster convergence speed and better generated speech quality.Specifically,in the generator coding part,each convolution layer adopts different convolution kernel sizes to conduct convolution operations for obtaining speech coding information from multiple scales;a gated linear unit is introduced to alleviate the vanishing gradient problem with the increase of network depth;the gradient penalty of the discriminator is replaced with spectral normalization to accelerate the convergence rate of themodel;a hybrid penalty termcomposed of L1 regularization and a scale-invariant signal-to-distortion ratio is introduced into the loss function of the generator to improve the quality of generated speech.The experimental results on both TIMIT corpus and Tibetan corpus show that the proposed model improves the speech quality significantly and accelerates the convergence speed of the model.展开更多
Cerebral ischemia was induced using photothrombosis 1 hour after intraperitoneal injection of the p38 mitogen-activated protein kinase (MAPK) inhibitor $B239063 into Swedish mutant amyloid precursor protein (APP/SW...Cerebral ischemia was induced using photothrombosis 1 hour after intraperitoneal injection of the p38 mitogen-activated protein kinase (MAPK) inhibitor $B239063 into Swedish mutant amyloid precursor protein (APP/SWE) transgenic and non-transgenic mice. The number of surviving neurons in the penumbra was quantified using Nissl staining, and the activity of p38 MAPKs was measured by western blotting. The number of surviving neurons in the penumbra was significantly reduced in APP/SWE transgenic mice compared with non-transgenic controls 7 days after cerebral ischemia, but the activity of p38 MAPKs was significantly elevated compared with the non-ischemic hemisphere in the APP/SWE transgenic mice. SB239063 prevented these changes. The APP/SWE mutation exacerbated ischemic brain injury, and this could be alleviated by inhibiting p38 MAPK activity.展开更多
This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers,showing that the laser exhibits higher sensitivity to external ...This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers,showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold.This sensitivity can be degraded by increasing the excited-to-ground-state energy separation,which results in a high excited-to-ground-state threshold ratio.In addition,the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor,which leads to a low critical feedback level.These findings illuminate a path to fabricate reflectioninsensitive quantum dot lasers for isolator-free photonic integrated circuits.展开更多
This work investigates the dynamic and nonlinear properties of quantum dot(QD) lasers directly grown on silicon with a view to isolator-free applications. Among them, the chirp parameter, also named the αHfactor,is f...This work investigates the dynamic and nonlinear properties of quantum dot(QD) lasers directly grown on silicon with a view to isolator-free applications. Among them, the chirp parameter, also named the αHfactor,is featured through a thermally insensitive method analyzing the residual side-mode dynamics under optical injection locking. The αHat threshold is found as low as 0.32. Then, the nonlinear gain is investigated from the gain compression factor viewpoint. The latter is found higher for epitaxial QD lasers on silicon than that in heterogeneously integrated quantum well(QW) devices on silicon. Despite that, the power dependence of the αHdoes not lead to a large increase of the chirp coefficient above the laser’s threshold at higher bias. This effect is confirmed from an analytical model and attributed to the strong lasing emission of the ground-state transition, which transforms into a critical feedback level as high as-6.5 d B, which is ~19 d B higher than a comparable QW laser.Finally, the intensity noise analysis confirms that QD lasers are overdamped oscillators with damping frequencies as large as 33 GHz. Altogether, these features contribute to fundamentally enhancing the reflection insensitivity of the epitaxial QD lasers. This last feature is unveiled by the 10 Gbit/s error-free high-speed transmission experiments. Overall, we believe that this work is of paramount importance for future isolator-free photonics technologies and cost-efficient high-speed transmission systems.展开更多
This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,a...This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,and nonlinear intrinsic properties to all improve with temperature,including the lasing efficiency,the modulation dynamics,the linewidth enhancement factor,and consequently the reflection insensitivity.Results reported show an optimum operating temperature at 75°C,highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits.展开更多
Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices.When one or more spatial...Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices.When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength,nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others.This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures.Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources.Here,we link the material and fundamental properties with the device physics.For this purpose,spectral linewidth,polarization anisotropy,optical nonlinearities as well as microwave,dynamic and nonlinear properties are closely examined.The paper focuses on photonic devices grown on native substrates(InP and GaAs)as well as those heterogeneously and epitaxially grown on silicon substrate.This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.展开更多
This work compares the four-wave mixing(FWM)effect in epitaxial quantum dot(QD)lasers grown on silicon with quantum well(QW)lasers.A comparison of theory and experiment results shows that the measured FWM coefficient ...This work compares the four-wave mixing(FWM)effect in epitaxial quantum dot(QD)lasers grown on silicon with quantum well(QW)lasers.A comparison of theory and experiment results shows that the measured FWM coefficient is in good agreement with theoretical predictions.The gain in signal power is higher for p-doped QD lasers than for undoped lasers,despite the same FWM coefficient.Owing to the near-zero linewidth enhancement factor,QD lasers exhibit FWM coefficients and conversion efficiency that are more than one order of magnitude higher than those of QW lasers.Thus,this leads to self-mode locking in QD lasers.These findings are useful for developing on-chip sources for photonic integrated circuits on silicon.展开更多
基金supported by the National Science Foundation under Grant No.62066039.
文摘Recently,speech enhancement methods based on Generative Adversarial Networks have achieved good performance in time-domain noisy signals.However,the training of Generative Adversarial Networks has such problems as convergence difficulty,model collapse,etc.In this work,an end-to-end speech enhancement model based on Wasserstein Generative Adversarial Networks is proposed,and some improvements have been made in order to get faster convergence speed and better generated speech quality.Specifically,in the generator coding part,each convolution layer adopts different convolution kernel sizes to conduct convolution operations for obtaining speech coding information from multiple scales;a gated linear unit is introduced to alleviate the vanishing gradient problem with the increase of network depth;the gradient penalty of the discriminator is replaced with spectral normalization to accelerate the convergence rate of themodel;a hybrid penalty termcomposed of L1 regularization and a scale-invariant signal-to-distortion ratio is introduced into the loss function of the generator to improve the quality of generated speech.The experimental results on both TIMIT corpus and Tibetan corpus show that the proposed model improves the speech quality significantly and accelerates the convergence speed of the model.
基金supported by the National Natural Science Foundation of China, No. 81171191Shenzhen Bureau of Science Technology and Information, No. 201002013+1 种基金Guangdong Province Medical Science Fund, No. A2008601 and Jinan University Scientific Research Foundation for Creation and Cultivation, No. 21609708
文摘Cerebral ischemia was induced using photothrombosis 1 hour after intraperitoneal injection of the p38 mitogen-activated protein kinase (MAPK) inhibitor $B239063 into Swedish mutant amyloid precursor protein (APP/SWE) transgenic and non-transgenic mice. The number of surviving neurons in the penumbra was quantified using Nissl staining, and the activity of p38 MAPKs was measured by western blotting. The number of surviving neurons in the penumbra was significantly reduced in APP/SWE transgenic mice compared with non-transgenic controls 7 days after cerebral ischemia, but the activity of p38 MAPKs was significantly elevated compared with the non-ischemic hemisphere in the APP/SWE transgenic mice. SB239063 prevented these changes. The APP/SWE mutation exacerbated ischemic brain injury, and this could be alleviated by inhibiting p38 MAPK activity.
基金National Key Research and Development Program of China(2022YFB2803600)National Natural Science Foundation of China(62204072,U22A2093)+1 种基金Basic and Applied Basic Research Foundation of Guangdong Province(2021A1515110076,2023A1515012304)Shenzhen Science and Technology Innovation Program(GXWD20220811163623002,RCBS20210609103824050)。
文摘This work experimentally and theoretically demonstrates the effect of excited state lasing on the reflection sensitivity of dual-state quantum dot lasers,showing that the laser exhibits higher sensitivity to external optical feedback when reaching the excited state lasing threshold.This sensitivity can be degraded by increasing the excited-to-ground-state energy separation,which results in a high excited-to-ground-state threshold ratio.In addition,the occurrence of excited state lasing decreases the damping factor and increases the linewidth enhancement factor,which leads to a low critical feedback level.These findings illuminate a path to fabricate reflectioninsensitive quantum dot lasers for isolator-free photonic integrated circuits.
基金ENLITENED programAdvanced Research Projects Agency—Energy(DE-AR0000843)+1 种基金Institut MinesTélécomChina Scholarship Council
文摘This work investigates the dynamic and nonlinear properties of quantum dot(QD) lasers directly grown on silicon with a view to isolator-free applications. Among them, the chirp parameter, also named the αHfactor,is featured through a thermally insensitive method analyzing the residual side-mode dynamics under optical injection locking. The αHat threshold is found as low as 0.32. Then, the nonlinear gain is investigated from the gain compression factor viewpoint. The latter is found higher for epitaxial QD lasers on silicon than that in heterogeneously integrated quantum well(QW) devices on silicon. Despite that, the power dependence of the αHdoes not lead to a large increase of the chirp coefficient above the laser’s threshold at higher bias. This effect is confirmed from an analytical model and attributed to the strong lasing emission of the ground-state transition, which transforms into a critical feedback level as high as-6.5 d B, which is ~19 d B higher than a comparable QW laser.Finally, the intensity noise analysis confirms that QD lasers are overdamped oscillators with damping frequencies as large as 33 GHz. Altogether, these features contribute to fundamentally enhancing the reflection insensitivity of the epitaxial QD lasers. This last feature is unveiled by the 10 Gbit/s error-free high-speed transmission experiments. Overall, we believe that this work is of paramount importance for future isolator-free photonics technologies and cost-efficient high-speed transmission systems.
基金Advanced Research Projects Agency—Energy(DE-AR0001039)。
文摘This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,and nonlinear intrinsic properties to all improve with temperature,including the lasing efficiency,the modulation dynamics,the linewidth enhancement factor,and consequently the reflection insensitivity.Results reported show an optimum operating temperature at 75°C,highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits.
文摘Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices.When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength,nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others.This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures.Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources.Here,we link the material and fundamental properties with the device physics.For this purpose,spectral linewidth,polarization anisotropy,optical nonlinearities as well as microwave,dynamic and nonlinear properties are closely examined.The paper focuses on photonic devices grown on native substrates(InP and GaAs)as well as those heterogeneously and epitaxially grown on silicon substrate.This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.
基金Basic and Applied Basic Research Foundation of Guangdong Province(2021A1515110076)Center for Integrated Nanotechnologies,an Office of Science User Facility operated for the U.S.Department of Energy(DOE)Office of Science by Los Alamos National Laboratory(2021BC0057)DARPA PIPES(HR0011-19-C-0083).
文摘This work compares the four-wave mixing(FWM)effect in epitaxial quantum dot(QD)lasers grown on silicon with quantum well(QW)lasers.A comparison of theory and experiment results shows that the measured FWM coefficient is in good agreement with theoretical predictions.The gain in signal power is higher for p-doped QD lasers than for undoped lasers,despite the same FWM coefficient.Owing to the near-zero linewidth enhancement factor,QD lasers exhibit FWM coefficients and conversion efficiency that are more than one order of magnitude higher than those of QW lasers.Thus,this leads to self-mode locking in QD lasers.These findings are useful for developing on-chip sources for photonic integrated circuits on silicon.