Silicon nitride(SiN)-on-SiO,attracts increasing interest in integrated photonics owing to its low propagation loss and wide transparency window,extending from^400 nm to 2350 nm.Scalable integration of active devices s...Silicon nitride(SiN)-on-SiO,attracts increasing interest in integrated photonics owing to its low propagation loss and wide transparency window,extending from^400 nm to 2350 nm.Scalable integration of active devices such as amplifiers and lasers on the Si;N,platform will enable applications requiring optical gain and a much-nceded alternative to hybrid integration,which suffers from high cost and lack of high-volume manufacturability.We demonstrate a high-gain optical amplifier in Al2O3:Er^3+ monolithically integrated on the Si3N4 platform using a double photonic layer approach.The device exhibits a net Si3N4-to-Si3N4 gain of 18.11±0.9 dB at 1532 nm,and a broadband gain operation over 70 nm covering wavelengths in the S-,C-and L-bands.This work shows that rare-carth-ion-doped materials and in particular,rare-earth-ion-doped Al.05,can provide very high net amplification for the Si3N4 platform,paving the way to the development of different active devices monolithically integrated in this passive platform.展开更多
基金Stichting voor de Technische Werenschappen(STW)(STW-13536)Optical Sciences Group ar University of Twente.
文摘Silicon nitride(SiN)-on-SiO,attracts increasing interest in integrated photonics owing to its low propagation loss and wide transparency window,extending from^400 nm to 2350 nm.Scalable integration of active devices such as amplifiers and lasers on the Si;N,platform will enable applications requiring optical gain and a much-nceded alternative to hybrid integration,which suffers from high cost and lack of high-volume manufacturability.We demonstrate a high-gain optical amplifier in Al2O3:Er^3+ monolithically integrated on the Si3N4 platform using a double photonic layer approach.The device exhibits a net Si3N4-to-Si3N4 gain of 18.11±0.9 dB at 1532 nm,and a broadband gain operation over 70 nm covering wavelengths in the S-,C-and L-bands.This work shows that rare-carth-ion-doped materials and in particular,rare-earth-ion-doped Al.05,can provide very high net amplification for the Si3N4 platform,paving the way to the development of different active devices monolithically integrated in this passive platform.
