The angle dependence of optical phonon modes of an AlN bulk single crystal from the m-plane（1100） and c-plane（0001） surfaces, respectively, is investigated by polarized Raman spectroscopy in a backscattering confi...The angle dependence of optical phonon modes of an AlN bulk single crystal from the m-plane（1100） and c-plane（0001） surfaces, respectively, is investigated by polarized Raman spectroscopy in a backscattering configuration at room temperature. Corresponding Raman selection rules are derived according to measured scattering geometries to illustrate the angle dependence. The angle-dependent intensities of phonon modes are discussed and compared to theoretical scattering intensities, yielding the Raman tensor elements of A1（TO）, E22, E1（TO）, and A1（LO） phonon modes and the relative phase difference between the two complex elements of A1（TO）. Furthermore, the Raman tensor of wurtzite AlN is compared with that of wurtzite ZnO reported in previous work, revealing the intrinsic differences of lattice vibration dynamics between AlN and ZnO.展开更多
Luminescent materials convert various types of energy (e.g.,light radiation, electromagnetic radiation/electric field, and mechanical stimulus) into light emissions, resulting in a multitude of luminescence processes ...Luminescent materials convert various types of energy (e.g.,light radiation, electromagnetic radiation/electric field, and mechanical stimulus) into light emissions, resulting in a multitude of luminescence processes called photoluminescence (PL), electroluminescence (EL), and mechanoluminescence (ML)(Table S1 online). Due to the intriguing photophysical properties of these luminescent materials, they are widely developed and applied in many fields such as information security, energy harvesting, light sources and displays, infrastructure health monitoring, electronics.展开更多
Supercontinuum generation（SC） of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride（AIN） single crystal using a nanosecond 355 nm ultraviolet ...Supercontinuum generation（SC） of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride（AIN） single crystal using a nanosecond 355 nm ultraviolet laser. The AlN with a thickness of ~0.8 mm was grown by an optimized physical vapor transport technique and polished with solidification technology. Compared to previously reported ones, the achieved visible SC exhibited the broadest spectrum spanning from bulk materials pumped by a nanosecond pulse laser. The visible supercontinuum in Al N presents new opportunities for bulk material-based white light SC and may find more potential applications beyond typical applications in integrated semiconductive photoelectronic devices.展开更多
基金by the Program for Integrated Traditional Chinese and Western Medicine in Shandong Province of China(YXH2019ZXY007)Ji’nan Professionals Development Special Fund(20228118)+1 种基金Science and Technology Project of(Sinopec Group)Shengli Petroleum Administration Co.,Ltd(GKY2001)Science and Technology Project of Ji'nan Health Committee(2020-3-65).
基金financially supported by the Special Program for the State Key Program of National Natural Science of China (No. 61136001)the Major Research Plan of the National Natural Science Foundation of China (No. 91333207)
文摘The angle dependence of optical phonon modes of an AlN bulk single crystal from the m-plane（1100） and c-plane（0001） surfaces, respectively, is investigated by polarized Raman spectroscopy in a backscattering configuration at room temperature. Corresponding Raman selection rules are derived according to measured scattering geometries to illustrate the angle dependence. The angle-dependent intensities of phonon modes are discussed and compared to theoretical scattering intensities, yielding the Raman tensor elements of A1（TO）, E22, E1（TO）, and A1（LO） phonon modes and the relative phase difference between the two complex elements of A1（TO）. Furthermore, the Raman tensor of wurtzite AlN is compared with that of wurtzite ZnO reported in previous work, revealing the intrinsic differences of lattice vibration dynamics between AlN and ZnO.
基金supported by the National Natural Science Foundation of China (61875136, 62275170, and 52002246)the Guangdong Provincial Science Fund for Distinguished Young Scholars (2022B1515020054)+2 种基金Science and Technology Innovation Commission of Shenzhen (JCYJ20200109105413475)Scientific Research Foundation as Phase II construction of high-level University for the Youth Scholars of Shenzhen University 2019 (000002110223)the support of Shenzhen Key Laboratory of Intelligent Optical Measurement and Detection, Shenzhen University。
文摘Luminescent materials convert various types of energy (e.g.,light radiation, electromagnetic radiation/electric field, and mechanical stimulus) into light emissions, resulting in a multitude of luminescence processes called photoluminescence (PL), electroluminescence (EL), and mechanoluminescence (ML)(Table S1 online). Due to the intriguing photophysical properties of these luminescent materials, they are widely developed and applied in many fields such as information security, energy harvesting, light sources and displays, infrastructure health monitoring, electronics.
基金supported by the National Natural Science Foundation of China(NSFC)(Nos.61575129 and 11447029)the Science&Technology Innovation Committee Foundation of Shenzhen(No.JCYJ20160328144942069)
文摘Supercontinuum generation（SC） of more than one octave spectrum spanning covering from 400 nm to 820 nm was achieved by pumping a piece of aluminum nitride（AIN） single crystal using a nanosecond 355 nm ultraviolet laser. The AlN with a thickness of ~0.8 mm was grown by an optimized physical vapor transport technique and polished with solidification technology. Compared to previously reported ones, the achieved visible SC exhibited the broadest spectrum spanning from bulk materials pumped by a nanosecond pulse laser. The visible supercontinuum in Al N presents new opportunities for bulk material-based white light SC and may find more potential applications beyond typical applications in integrated semiconductive photoelectronic devices.
