Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical stability.However,because of their relatively low responsivity,Ga_(2)O_(3)-based p...Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical stability.However,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical applications.Here,we construct a high-performance Ga_(2)O_(3)photodetector realized by back-illumination.Utilizing high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated mode.Therefore,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.展开更多
基金The National Natural Science Foundation of China(No.61665005)the Natural Science Foundation of Gansu Province of China(Nos.17JR5RA132,17JR5RA119)the HongLiu First-class Disciplines Development Program of Lanzhou University of Technology。
基金supported by the National Natural Science Foundation of China(Grant No.62204125)the National Key Research and Development Program of China(Grant No.2022YFB3605404)the Hongliu Outstanding Young Talents Funding Scheme of Lanzhou University of Technology。
文摘Ga_(2)O_(3)is a promising material for deep-ultraviolet(DUV)photodetectors due to its ultra-wide bandgap and high thermal and chemical stability.However,because of their relatively low responsivity,Ga_(2)O_(3)-based photodetectors still have difficulty meeting the requirements of practical applications.Here,we construct a high-performance Ga_(2)O_(3)photodetector realized by back-illumination.Utilizing high-crystallinity epitaxially grown Ga_(2)O_(3)as the DUV absorbing layer and the double-polished Al_(2)O_(3)substrate as the transparent window for injection of photons,the device operating in the back-illuminated mode exhibits a higher DUV photoresponse and faster response speed than in the front-illuminated mode.Therefore,our experimental results have led to the development of a novel strategy for designing and fabricating high-performance Ga_(2)O_(3)photodetectors.
