The influence of surface S^2- dangling bonds and surface doped ions（Se^2-, Cu^2＋, and Hg^2＋） on the photoluminescence of Cd^2＋-rich CdS QDs was investigated. A quantitative model was proposed to understand the co...The influence of surface S^2- dangling bonds and surface doped ions（Se^2-, Cu^2＋, and Hg^2＋） on the photoluminescence of Cd^2＋-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd^2＋-related trap-state to the surface S^2-related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd^2＋-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd^2＋-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd^2＋-related trap-state.展开更多
基金Supported by the Measurement and Testing Center of Zhejiang Province, China(No.02079).
文摘The influence of surface S^2- dangling bonds and surface doped ions（Se^2-, Cu^2＋, and Hg^2＋） on the photoluminescence of Cd^2＋-rich CdS QDs was investigated. A quantitative model was proposed to understand the complex transfer processes of excited electrons in CdS QDs. The transfer of excited electrons from either the conduction band or the Cd^2＋-related trap-state to the surface S^2-related shallow hole trap-state is effective. However, the trap of excited electrons by surface doped ion trap-states from the Cd^2＋-related trap-state is more effective than that from the conduction band. The efficiency of trapping electrons from both the conduction band and the Cd^2＋-related trap-state can be quantitatively understood with the help of the proposed model. The results show that the transfer efficiency of excited electrons is dependent on the location of the energy-level of the relevant surface-related trap-state. The trap of excited electrons by the surface trap-state with energy-level closer to that of the conduction band is more effective, especially for the trap of excited electrons from Cd^2＋-related trap-state.
