直流磁控溅射和高功率脉冲磁控溅射TiSiN涂层的结构与性能比较

目的对比研究HiPIMS和DCMS技术对涂层组织、结构与性能的影响,为不同磁控溅射技术制备硬质涂层提供理论依据与实验指导。方法在相同功率密度下,通过HiPIMS和DCMS技术分别制备TiSiN涂层。通过X射线衍射仪(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、扫描探针显微镜(SPM)表征涂层的结构和形貌,并通过纳米压痕仪、划痕仪、UMT-3摩擦磨损试验机、电化学工作站表征涂层的力学、摩擦学和耐腐蚀性能。结果与DCMS制备的TiSiN涂层相比,HiPIMS技术所制备的涂层表面更加光滑,结构更为致密,硬度提高了10%,且应力降低了35%,呈低应力高硬度特征,涂层的韧性和结合力也明显提高,膜基结合力由DCMS涂层的40N提高至50N。同时,涂层的耐磨和耐腐蚀性能得到提升,摩擦系数降低了18%,腐蚀电流密降低了将近1个数量级。结论与DCMS相比,HiPIMS技术在制备TiSiN纳米复合涂层上具有显著优势,有效提高了涂层的综合使役性能。

Effect of substrate bias on microstructure and tribological performance of GLC films using hybrid HIPIMS technique

The Cr-doped hydrogen-GLC films were prepared by a hybrid magnetron sputtering system composed of a direct current magnetron sputtering (DC-MS) source of carbon and a high power impulse magnetron sputtering (HIPIMS) source of Cr with reactive gas of C2H2.The hydrogen-free GLC and Cr-doped GLC films were also prepared for comparison.The influence of substrate bias on the Cr-doped hydrogen-GLC films was investigated.With the increase of substrate bias from 100 V to 250 V,the re-sputtering of weak bonding sp2 firstly occurred and induced an increased sp3 bonding.However,the following sp3 to sp2 transformation resulted in a decreased sp3 bonding.The change trends of surface roughness and friction coefficient with the increased bias voltages were the same as those of sp3 bond.The lowest surface roughness and lowest friction coefficient corresponded to the highest sp3 with the Cr-GLC-H films at the bias voltage of-100 V.